• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>International Conference on Silicon Carbide and Related Materials 2001 Pt.1 Oct 28-Nov 2, 2001 Tsukuba, Japan >Ultrafast Electron Relaxation Processes in SiC
【24h】

Ultrafast Electron Relaxation Processes in SiC

机译：SiC中的超快电子弛豫过程

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

The ultrafast inter-conduction band carrier dynamics in 6H-SiC and 4H-SiC was observed by using the pump and probe transient absorption technique. Probe wavelength dependence of the transmission changes for each polarization configuration was measured for various probe wavelengths, and analyzed by the steady-state absorption profiles for each sample. In 6H-SiC, the bleaching of Biedermann band with a time constant of 1.25 ps was observed, and in 4H-SiC, both bleaching and induced absorption with a time constant of 630 fs was observed. These phenomena correspond to the change of electron population in the c_1 band. The observed decay times of these transmission changes in 6H- and 4H-SiC are ascribed to the inter-conduction band electron-phonon scattering time.
机译：使用泵浦和探针瞬态吸收技术观察了6H-SiC和4H-SiC中超快的导带间载流子动力学。对于各种探针波长，测量每种偏振配置的透射率变化的探针波长依赖性，并通过每个样品的稳态吸收曲线进行分析。在6H-SiC中，观察到Biedermann谱带的时间常数为1.25 ps的漂白，而在4H-SiC中，观察到的漂白和诱导吸收的时间常数为630 fs。这些现象对应于c_1波段电子数量的变化。在6H-和4H-SiC中观察到的这些传输变化的衰减时间归因于导带间电子-声子的散射时间。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号