Void-Free Epitaxial Growth of Cubic SiC Crystallites during CO Heat Treatment of Oxidized Silicon

机译：氧化硅的CO热处理过程中立方SiC微晶的无空隙外延生长

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We report on a novel method for epitaxial 3C-SiC growth on Si, achieved by annealing of a high-quality SiO_2/Si structure in a CO containing gas ambient. In this way high quality epitaxial 3C-SiC seeds are produced on Si (001) surfaces. The SiC crystallites grow into the Si surface layer without voids at the Si/SiC interface. So far a 20 % SiC coverage of the Si surface has been achieved with some SiC crystallites coalescing without grain boundaries. The system has been investigated by TEM (Transmission Electron Microscopy) and CV (Capacitance-Voltage) measurements.

机译：我们报告了一种通过在含CO的气体环境中对高质量SiO_2 / Si结构进行退火的方法在Si上外延生长3C-SiC的新方法。通过这种方式，在Si（001）表面上产生了高质量的外延3C-SiC晶种。 SiC微晶生长到Si表面层中，而在Si / SiC界面处没有空隙。到目前为止，一些无晶粒边界的SiC微晶聚结，已经实现了Si表面20％的SiC覆盖率。该系统已通过TEM（透射电子显微镜）和CV（电容-电压）测量进行了研究。

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来源
《International Conference on Silicon Carbide and Related Materials 2001 Pt.1 Oct 28-Nov 2, 2001 Tsukuba, Japan》|2001年|p.359-362|共4页
会议地点 Tsukuba(JP);Tsukuba(JP)
作者
Olga H. Krafcsik; Gyoergy Vida; Katalin V. Josepovits; Peter Deak; Gyoergy Z. Radnoczi; Bela Pecz; Istvan Barsony;
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作者单位

Research Institute for Technical Physics and Materials Science of the H.A.S.P.O., PO Box 49, HU-1525 Budapest, Hungary;

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会议组织
原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
关键词
CO-annealing; epitaxial growth; void-free;

机译：共退火；外延生长；无空隙;

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专利

1. Epitaxial Growth of Void-Free 3C-SiC on Si with Heterointerface Modification by SiN_x [J] . Kwang Chul Kim, Kee Suk Nahm, Eun Kyung Suh Electrochemical and solid-state letters . 1998,第4期

机译：SiN_x修饰异质界面在硅上外延生长无空隙3C-SiC
2. Restricted Epitaxial Growth of Crystallites in Hydrogenated Nanocrystalline Silicon During Thermal Crystallization Experiments [J] . P. Roura, J. Farjas, P. Roca i Cabarrocas Journal of nanoscience and nanotechnology . 2009,第6期

机译：热结晶实验过程中氢化纳米晶硅中微晶的外延生长受限
3. Restricted Epitaxial Growth of Crystallites in Hydrogenated Nanocrystalline Silicon During Thermal Crystallization Experiments [J] . P. Roura, J. Farjas, P. Roca i Cabarrocas Journal of nanoscience and nanotechnology . 2009,第6期

机译：热结晶实验过程中氢化纳米晶硅中微晶的外延生长受限
4. Photoluminescence study of interface dislocations in the silicon substrate after epitaxial growth of cubic silicon carbide [C] . International conference on SiC and related materials . 1994

机译：立方碳化硅外延生长后硅衬底界面位错的光致发光研究
5. Growth and characterization of epitaxial 3C-SiC films on silicon for electronic applications. [D] . Jacob, Chacko. 1997

机译：电子应用硅上外延3C-SiC薄膜的生长和表征。
6. Epitaxial graphene on cubic SiC(111)∕Si(111) substrate [O] . A. Ouerghi, A. Kahouli, D. Lucot, -1

机译：立方SiC（111）∕ Si（111）衬底上的外延石墨烯
7. 3C-6H transformation in heated cubic silicon carbide 3C-SiC [O] . Vlaskina S.I., Mishinova G.N., Vlaskin V.I., 2011

机译：加热的立方碳化硅3C-SiC中的3C-6H相变

Void-Free Epitaxial Growth of Cubic SiC Crystallites during CO Heat Treatment of Oxidized Silicon

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