Aluminum Doping of Epitaxial Silicon Carbide Grown by Hot-Wall CVD; Effect of Process Parameters

机译：热壁CVD生长外延碳化硅的铝掺杂；工艺参数的影响

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Intentional p-type doping of SiC has been performed by using trimethylaluminum as dopant source. A comprehensive investigation of the aluminum incorporation dependency on temperature, pressure, C/Si ratio and growth rate in a horizontal hot-wall CVD reactor has been made. The incorporation mechanism for 4H and 6H-SiC both for Si- and C-face material is presented.

机译：通过使用三甲基铝作为掺杂剂源，进行了有意的SiC的p型掺杂。对水平热壁CVD反应器中铝的掺入对温度，压力，C / Si比和生长速率的依赖性进行了全面研究。提出了用于Si和C面材料的4H和6H-SiC结合机理。

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《International Conference on Silicon Carbide and Related Materials 2001 Pt.1 Oct 28-Nov 2, 2001 Tsukuba, Japan》|2001年|p.203-206|共4页
会议地点 Tsukuba(JP);Tsukuba(JP)
作者
U. Forsberg; Oe. Danielsson; A. Henry; M.K. Linnarsson; E. Janzen;
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作者单位

Department of Physics and Measurement Technology, Linkoeping University, SE-581 83 Linkoeping, Sweden;

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会议组织
原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
关键词
aluminum; CVD; doping; hot-wall; thermodynamical calculations;

机译：铝; CVD;掺杂;热壁;热力学计算;

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1. Predicted nitrogen doping concentrations in silicon carbide epitaxial layers grown by hot-wall chemical vapor deposition [J] . OE. Danielsson, U. Forsberg, E. Janzen Journal of Crystal Growth . 2003,第3a4期

机译：热壁化学气相沉积法生长的碳化硅外延层中预测的氮掺杂浓度
2. Structural and Electrical Properties of Unintentionally Doped 4H-SiC Epitaxial Layers-Grown by Hot-Wall CVD [J] . G.Wagner, B.Thomas, J.Doerschel, Journal of Electronic Materials . 2001,第3期

机译：热壁CVD生长的无意掺杂的4H-SiC外延层的结构和电性能
3. Structural properties and parameters of epitaxial silicon carbide films, grown by atomic substitution on the high-resistance (111) oriented silicon [J] . S.A. Kukushkin, K. Kh. Nussupov, A.V. Osipov, Superlattices and microstructures . 2017,第nova期

机译：通过在高电阻（111）取向的硅上原子取代生长的外延碳化硅膜的结构特性和参数
4. Epitaxial Deposition of Silicon Carbide Films in a Horizontal Hot-wall CVD Reactor [C] . Alessandro Veneroni, Fabrizio Omarini, Maurizio Masi European Conference on Silicon Carbide and Related Materials . 2005

机译：水平热壁CVD反应器中碳化硅膜的外延沉积
5. Conducting (silicon-doped) aluminum nitride epitaxial films grown by molecular beam epitaxy: Experiment and theory. [D] . Kim, Jongjin G. 1998

机译：通过分子束外延生长的导电（掺硅）氮化铝外延膜：实验和理论。
6. Annealing of Boron-Doped Hydrogenated Crystalline Silicon Grown at Low Temperature by PECVD [O] . Marta Chrostowski, José Alvarez, Alessia Le Donne, 2019

机译：PECVD对低温生长的掺硼氢化晶体硅的退火
7. In-Situ Boron and Aluminum Doping and Their Memory Effects in 4H-SiC Homoepitaxial Layers Grown by Hot-Wall LPCVD [O] . Guosheng Sun, Yongmei Zhao, Liang Wang, 2016

机译：热壁LpCVD生长4H-siC同质外延层中的原位硼和铝掺杂及其记忆效应

Aluminum Doping of Epitaxial Silicon Carbide Grown by Hot-Wall CVD; Effect of Process Parameters

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