The influence of recombination-induced migration of hydrogen on the formation of V_(Si)-H complexes in SiC

机译：重组诱导的氢迁移对SiC中V_（Si）-H配合物形成的影响

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In this work, the first evidence of the recombination-induced formation of hydrogen complexes with Si vacancies (V_(Si)-H) in 4H and 6H-SiC epilayers is obtained. It is established that the availability of hydrogen that is not tied up with stable complexes following plasma hydrogenation leads to the additional formation of the V_(Si)-H centers under optical excitation at low-temperatures. This process may be observed as an increase of the V_(Si)-H PL in certain types of hydrogenated samples. The PL transient is found to be a superposition of two effects: (1) the growth due to the recombination-induced formation of the corresponding defect centers; and (2) the quenching due to the transition of the V_(Si)-H centers to their metastable state.

机译：在这项工作中，获得了在4H和6H-SiC外延层中重组诱导形成具有Si空位（V_（Si）-H）的氢配合物的第一个证据。可以确定的是，等离子体氢化后没有与稳定的配合物结合的氢的可用性导致在低温光激发下V_（Si）-H中心的额外形成。在某些类型的氢化样品中，随着V_（Si）-H PL的增加，可以观察到此过程。发现PL瞬变是两个作用的叠加：（1）由于重组诱导形成的相应缺陷中心而导致的生长；（2）由于V_（Si）-H中心转变为其亚稳态而引起的猝灭。

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来源
《International Conference on Silicon Carbide and Related Materials 2003 pt.1(ICSCRM 2003); 20031005-20031010; Lyon; FR》|2003年|P.497-500|共4页
会议地点 Lyon(FR);Lyon(FR)
作者
Y. Koshka; M.S. Mazzola;
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作者单位

Department of Electrical Computer Engineering, Mississippi State University, Box 9571, Mississippi State, MS 39762, USA;

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原文格式 PDF
正文语种 eng
中图分类硅Si;
关键词
defect reactions; defect migration; hydrogen; passivation; photoluminescence;

机译：缺陷反应;缺陷迁移;氢;钝化;光致发光;

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专利

1. Recombination-induced formation of hydrogen-defect complexes in 4H and 6H-SiC: electrical and optical characterization [J] . Koshka Y., Los A., Mazzola MS., Physica, B. Condensed Matter . 2003,第0期

机译：重组诱导的4H和6H-SiC中氢缺陷络合物的形成：电学和光学表征
2. Recombination-induced athermal migration of hydrogen and deuterium in SiC [J] . Yaroslav Koshka, Bharat Krishnan Journal of Applied Physics . 2005,第3期

机译：重组诱导的SiC中氢和氘的无热迁移
3. Metastable and nonmetastable recombination-induced defect reactions involving a hydrogen complex with a silicon vacancy in SiC [J] . Yaroslav Koshka Physical Review. B, Condensed Matter . 2004,第3期

机译：SiC中包含氢配合物和硅空位的亚稳和不可转移重组诱导的缺陷反应
4. Recombination-induced formation of hydrogen-defect complexes in 4H and 6H-SiC: electrical and optical characterization [C] . Y. Koshka, A. Los, M.S. Mazzola, International conference on defects in semiconductors . 2003

机译：重组诱导的4H和6H-SIC中的氢缺陷复合物的形成：电气和光学表征
5. Influence of confinement on the deformation behavior of zirconium diboride-silicon carbide (ZrB2-SiC) composite. [D] . Shafiq, Muhammad. 2015

机译：约束对二硼化锆-碳化硅（ZrB2-SiC）复合材料变形行为的影响。
6. The Influence of the Position of the Double Bond and Ring Size on the Stability of Hydrogen Bonded Complexes [O] . Shumin Cheng, Shanshan Tang, Narcisse T. Tsona, -1

机译：双键位置和环尺寸对氢键配合物稳定性的影响
7. Formation of hydrogen complexes in proton implanted silicon and their influence on the crystal damage [O] . T. Höchbauer, A. Misra, M. Nastasi, 2006

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8. Influence of ZrC and SiC Additives on the Thermal Migration of BISO-Coated (Th,U)O sub 2 Kernels [R] . Stevens, D. W., Sterling, S. A. 1979

机译：ZrC和siC添加剂对BIsO涂层（Th，U）O亚2基团热迁移的影响

The influence of recombination-induced migration of hydrogen on the formation of V_(Si)-H complexes in SiC

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