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首页> 外文会议>International Conference on Silicon Carbide and Related Materials 2003 pt.2(ICSCRM 2003); 20031005-20031010; Lyon; FR >High Voltage (500V-14RV) 4H-SiC Unipolar-Bipolar Darlington Transistors for High-Power and High-Temperature Applications
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High Voltage (500V-14RV) 4H-SiC Unipolar-Bipolar Darlington Transistors for High-Power and High-Temperature Applications

机译：适用于大功率和高温应用的高压（500V-14RV）4H-SiC单极-双极达林顿晶体管

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摘要

Four 14kV power switch configurations in 4H-SiC including single normally-off trenched-and-implanted VJFET (TIVJFET), single BJT, TTVJFET-BJT Darlington pair and BJT-BJT Darlington pair are investigated and compared by performing two-dimensional numerical simulations. The Darlington pairs have higher current handling capability and require less drive current than the single devices. When current density is lower than 64A/cm~2, TIVJFET-BJT Darlington pair has a much higher current gain than BJT-BJT Darlington pair. Experimental results of a single TIVJFET, a TIVJFET-TIVJFET Darlington pair, and a TIVJFET-BJT Darlington pair at ～500V are reported. Both simulation and experimental results show that one can keep the advantage of voltage-controlled property of TIVJFETs while maintaining the advantage of higher current handling capability of BJTs, making TIVJFET-BJT Darlington transistors a better choice in comparison to BJT-BJT Darlington transistors.
机译：通过二维数值模拟，研究并比较了4H-SiC中的四个14kV电源开关配置，包括单个常断沟槽和注入VJFET（TIVJFET），单个BJT，TTVJFET-BJT达林顿对和BJT-BJT达林顿对。达林顿对具有更高的电流处理能力，并且比单个设备需要更少的驱动电流。当电流密度低于64A / cm〜2时，TIVJFET-BJT达林顿对具有比BJT-BJT达林顿对更高的电流增益。报道了单个TIVJFET，TIVJFET-TIVJFET达林顿对和TIVJFET-BJT达林顿对在〜500V的实验结果。仿真和实验结果均表明，既可以保持TIVJFET的电压控制特性的优势，又可以保持BJT的更高电流处理能力的优势，使得TIVJFET-BJT达林顿晶体管比BJT-BJT达林顿晶体管更好。

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