Static and Dynamic Characterization of 20A, 600V SiC MOS-Enhanced JFET

机译：20A，600V SiC MOS增强JFET的静态和动态特性

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High current MOS-trench vertical JFETs (4H-SiC) with a blocking voltage of 600V and a low specific on-resistance of 2.86mΩ-cm~2 has been demonstrated successfully. This paper describes the static and dynamic characterization of 600V, 20A SiC MOS-enhanced JFET designed and fabricated at Rockwell Scientific. A standard double pulse test circuit with an inductive load is used for the dynamic characterization. An in-house designed and fabricated gate drive is used to drive the normally-on JFETs. The power loss and related voltage and current stresses of the SiC MOS-enhanced JFETs are measured and reported.

机译：已经成功地证明了具有600V的阻断电压和2.86mΩ-cm〜2的低导通电阻的高电流MOS沟道垂直JFET（4H-SiC）。本文介绍了由Rockwell Scientific设计和制造的600V，20A SiC MOS增强JFET的静态和动态特性。动态电感使用带有电感负载的标准双脉冲测试电路。内部设计和制造的栅极驱动器用于驱动常通JFET。测量并报告了SiC MOS增强型JFET的功率损耗以及相关的电压和电流应力。

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来源
《International Conference on Silicon Carbide and Related Materials 2003 pt.2(ICSCRM 2003); 20031005-20031010; Lyon; FR》|2003年|P.1389-1392|共4页
会议地点 Lyon(FR);Lyon(FR)
作者
E. Hanna; H.-R. Chang; A.V. Radun; Q. Zhang; M. Gomez;
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作者单位

Rockwell Scientific Company 1049 Camino Dos Rios, Thousand Oaks, CA 91360 USA;

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会议组织
原文格式 PDF
正文语种 eng
中图分类硅Si;
关键词
silicon carbide; JFET; static and dynamic characteristics; power dissipation;

机译：碳化硅; JFET;静动态特性;功耗;

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Static and Dynamic Characterization of 20A, 600V SiC MOS-Enhanced JFET

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