MODELLING OF THE THREE-DIMENSIONAL STRAIN OF LARGE DIAMETER SILICON WAFER BY BODY WEIGHT LOADING AT HEAT TREATMENTS

机译：热处理时人体重量载荷对大直径硅晶片三维应变的建模

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Three-dimensional problem for definition of elastic strains and deformations in the 200 and 300 mm diameter dislocation-free silicon wafers was formulated and solved in isotropic approximation. These wafers were allocated horizontally on three symmetrical needles (with intermediate angels - 120° between them), in conditions of gravity and thermal actions. In the case of gravity action the smaller strains were defined in wafers for needles allocation on distance 0.6-0.7R from its centre. Strained states for all probable gliding systems were calculated. It was shown for 300 mm diameter wafers, that the gravity plays the main role in formation of elastic stresses even at radial temperature difference - 5 K (between a centre and an edge of wafer). At such temperature difference in 200mm diameter wafers the thermal stresses contribution is comparable to gravity contribution. At radial temperature differences less 5 K the contribution of thermal stresses may be neglectable for 200mm diameter wafers, too. Taking into account the obtained values of the maximal stresses, it is possible the dislocation generation in near contact wafer regions during a high-temperature annealing of 200 mm and especially 300 mm diameter wafers.

机译：提出了定义200和300 mm直径无位错硅晶片中弹性应变和变形的三维问题，并通过各向同性近似法求解。在重力和热作用条件下，将这些晶片水平地分配在三个对称的针上（中间有120°的角度）。在重力作用的情况下，在晶片上将较小的应变定义为在距其中心0.6-0.7R的距离处分配针头。计算所有可能的滑行系统的应变状态。对于直径为300 mm的晶片，即使在径向温度差-5 K（晶片的中心和边缘之间），重力也起弹性应力形成的主要作用。在直径为200mm的晶片中存在这种温度差时，热应力的贡献与重力的贡献相当。在径向温度差小于5 K的情况下，对于200mm直径的晶圆，热应力的影响也可以忽略不计。考虑到所获得的最大应力值，有可能在直径为200 mm的晶片，尤其是直径为300 mm的晶片的高温退火过程中，在接近接触的晶片区域中产生位错。

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《International Conference on Single Crystal Growth and Heat amp; Mass Transfer(ICSC-2003) vol.2; 20030922-26; Obninsk(RU)》|2003年|P.419-429|共11页
会议地点 Obninsk(RU)
作者
Mezhennyi M.V.; Milvidskii M.G.; Prostomolotov A.I.;
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State Institute of Rare Metals, Moscow;

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原文格式 PDF
正文语种 eng
中图分类晶体生长工艺;
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机译：大直径硅片表面应变的同步辐射X射线形貌
2. Diffuse X-ray Scattering Study of the Formation of Microdefects in Heat-Treated Dislocation-Free Large-Diameter Silicon Wafers [J] . V. T. Bublik, S. Yu. Matsnev, K. D. Shcherbachev, Physics of the solid state . 2003,第10期

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4. MODELLING OF THE THREE-DIMENSIONAL STRAIN OF LARGE DIAMETER SILICON WAFER BY BODY WEIGHT LOADING AT HEAT TREATMENTS [C] . Mezhennyi M.V., Milvidskii M.G., Prostomolotov A.I., International Conference on Single Crystal Growth and Heat Mass Transfer . 2003

机译：大直径硅晶片三维应变在热处理中的体重载荷
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MODELLING OF THE THREE-DIMENSIONAL STRAIN OF LARGE DIAMETER SILICON WAFER BY BODY WEIGHT LOADING AT HEAT TREATMENTS

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