首页> 外文会议>International Conference on Single Crystal Growth and Heat amp; Mass Transfer(ICSC-2003) vol.2; 20030922-26; Obninsk(RU) >SIMULATION OF FACET FORMATION ON THE CRYSTALLIZATION FRONT IN OXIDE CRYSTALS GROWTH BY CZOCHRALSKI TECHNIQUE
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SIMULATION OF FACET FORMATION ON THE CRYSTALLIZATION FRONT IN OXIDE CRYSTALS GROWTH BY CZOCHRALSKI TECHNIQUE

机译:用CCHOCHRALSKI技术模拟氧化物晶体生长中结晶前沿的晶面形成。

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摘要

For the first time the modeling of melt/crystal interface faceting in oxide crystals growth by Cz technique have been performed. The formation of the flat horizontal facet in 2D axisymmetrical problem was simulated for the different values of supercooling. Internal radiative heat transfer was treated accurately and non-monotonic temperature distribution inside the growing crystal near the crystallization front was observed.
机译:首次通过Cz技术对氧化物晶体生长中的熔体/晶体界面刻面进行了建模。针对过冷度的不同值,模拟了二维轴对称问题中平坦水平面的形成。准确地处理了内部辐射传热,并观察到靠近结晶前沿的生长晶体内部的非单调温度分布。

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