• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>International Instrumentation Symposium; 20070430-503; Tulsa,OK(US) >Strain Induced Diffusivity Effects in Indium-Tin-Oxide Strain Gages
【24h】

Strain Induced Diffusivity Effects in Indium-Tin-Oxide Strain Gages

机译：铟锡氧化物应变片中的应变诱导扩散效应

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

The effect of strain level on gage factor was investigated from room temperature to 1000℃ and the piezoresistive response was established for a number of ITO thin film strain sensors tested in both tension and compression. A new zirconia based laminated substrate capable of being strained to 2000με prior to fracture, was used to evaluate the response of the ITO strain gages at strain levels approaching 1000με. When tested in tension at temperatures up to 1000℃, the gage factor was marginally dependent on strain and rapidly approached a steady state value of 4.0. However, when the same ITO strain gages were tested in compression, the gage factor was considerably less stable, i.e. gages exhibited much greater variability as a function of temperature. This lead us to postulate that there may be a strain induced diffusivity effect (oxygen diffusion effect) that might be responsible for the observed trends in gage factor at higher strains. To study this effect, high purity alumina coatings were deposited onto the ITO strain gages, which were then tested to 1000με. Preliminary results indicate that protective coatings may mitigate the enhanced oxygen diffusivity at high strain levels and thus, stabilize the piezoresistive response, and in some instances actually increasing the piezoresistive response. The results of this study are presented and the implications on high temperature strain measurement are discussed.
机译：研究了从室温到1000℃应变水平对应变系数的影响，并针对在拉伸和压缩状态下测试的许多ITO薄膜应变传感器建立了压阻响应。一种新的基于氧化锆的层压基板能够在断裂前应变至2000με，用于评估ITO应变计在应变水平接近1000με时的响应。在高达1000℃的温度下进行拉伸测试时，应变系数在一定程度上取决于应变，并迅速达到4.0的稳态值。但是，当在压缩状态下测试相同的ITO应变计时，应变系数的稳定性大大降低，即，应变片随温度的变化表现出大得多的可变性。这导致我们推测可能存在应变引起的扩散效应（氧扩散效应），这可能是在较高应变下所观察到的应变系数趋势的原因。为了研究这种效果，将高纯度氧化铝涂层沉积在ITO应变计上，然后对其进行了1000μs的测试。初步结果表明，保护涂层可以减轻高应变水平下增强的氧气扩散性，从而稳定压阻响应，并在某些情况下实际增加压阻响应。介绍了这项研究的结果，并讨论了其对高温应变测量的影响。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号