SI Transition in (Bi2201)_x(Bi2212)_(1-x) Intergrowth Crystal Thin Film

机译：（Bi2201）_x（Bi2212）_（1-x）共生晶体薄膜的SI跃迁

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The sheet resistance (R_□) of the (Bi2201)_x(Bi2212)_(1-x) intergrowth crystal thin films with x=0.3 was investigated every 11 nm up to 88 nm as a function of film thickness. The superconductor-insulator (SI) transition took place between 22 and 44 nm in the thickness (d), and its sheet resistance (R_(□,N)) in the normal state, was approximately close to the universal quantum resistance(R_q).

机译：对于x ＝ 0.3的（Bi2201）_x（Bi2212）_（1-x）共生晶体薄膜，其薄层电阻（R_□）每11nm至88nm被研究为膜厚度的函数。超导体-绝缘体（SI）的转变发生在厚度（d）的22至44 nm之间，并且其正常状态下的薄层电阻（R_（□，N））接近于通用量子电阻（R_q）。

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来源
《International Symposium on Magnetic Industry(ISMI'04) amp; International Symposium on Physics and IT Industry(ISPITI'04); 20041004-08; Shenyang(CN)》|2004年|P.202-204|共3页
会议地点 Shenyang(CN)
作者
Yang Qi; Huazhe Yang;
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作者单位

Inst. of materials physics and chemistry, NEU, Shenyang 110004, China;

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原文格式 PDF
正文语种 eng
中图分类磁性材料、铁氧体;
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SI Transition in (Bi2201)_x(Bi2212)_(1-x) Intergrowth Crystal Thin Film

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