Study of Oxygen Precipitation and Internal Gettering in Heavily As-doped Silicon Crystal

机译：重掺杂硅晶体中氧的沉淀和内部吸杂的研究

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In this paper, the behavior of oxygen precipitation in the silicon wafers heavily doped with As after annealing were studied. The experimental results showed that the nucleation temperature of the oxygen precipitates and induced-defects in heavily As-doped Si is about 900℃. And when annealing at moderate and high temperature, the density of oxygen precipitates is higher. Both the size and density of oxygen precipitates increase with annealing time, the size decreases with the annealing temperature. TEM showed that the faults and dislocation loops induced by the oxygen precipitates were formed when the wafers were annealed at moderate temperature, and polyhedral oxygen precipitates was generated at high temperature. An improved internal gettering process was suggested for the heavily As-doped silicon.

机译：本文研究了退火后重掺杂砷的硅片中氧沉淀的行为。实验结果表明，高掺砷硅中氧的析出和诱导缺陷的成核温度约为900℃。并且，当在中等和高温下退火时，氧沉淀的密度更高。氧析出物的尺寸和密度均随退火时间的增加而增加，尺寸随退火温度的降低而减小。 TEM表明，当在中等温度下对晶片进行退火时，由氧沉淀物引起的断层和位错环形成，并且在高温下产生多面体氧沉淀物。对于重掺杂砷的硅，提出了一种改进的内部吸杂工艺。

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来源
《International Symposium on Magnetic Industry(ISMI'04) amp; International Symposium on Physics and IT Industry(ISPITI'04); 20041004-08; Shenyang(CN)》|2004年|P.208-210|共3页
会议地点 Shenyang(CN)
作者
Qiuyan Hao; Caichi Liu; Hongdi Zhang; Jianqiang zhang; Shilong Sun; Shijie Han;
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Institute of Information Function Materials, Hebei University of Technology, Tianjin, 300130, P.R.China;

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正文语种 eng
中图分类磁性材料、铁氧体;
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1. Oxygen precipitation and improved internal gettering in heavily As-doped silicon crystal [J] . Hao QY, Liu CC, Zhang HD, Materials science in semiconductor processing . 2006,第1a3期

机译：重度掺杂硅晶体中的氧沉淀和改善的内部吸杂
2. Enhanced internal gettering in n~+ epitaxial silicon wafer: coaction of nitrogen impurity and vacancy on oxygen precipitation in substrate [J] . Peng Dong, Xingbo Liang, Daxi Tian, Journal of materials science . 2014,第8期

机译：n / n〜+外延硅晶片中增强的内部吸杂：氮杂质和空位的相互作用对衬底中氧的沉积
3. Effect of carbon doping on oxygen precipitation behavior in internal gettering processing for Czochralski silicon [J] . Chen JH, Yang DR, Ma XY, Journal of Crystal Growth . 2006,第1期

机译：碳掺杂对切克劳斯基硅内部吸杂过程中氧沉淀行为的影响
4. Study of Oxygen Precipitation and Internal Gettering in Heavily As-doped Silicon Crystal [C] . Qiuyan Hao, Caichi Liu, Hongdi Zhang, International Symposium on Magnetic Industry . 2005

机译：诸如掺杂硅晶体中氧气降析和内部吸收的研究
5. Aluminum gettering of crystalline silicon for improvement of minority carrier diffusion length and for studies of fundamental diffusion mechanisms. [D] . Joshi, Subhash Mukund. 2000

机译：晶体硅的铝吸杂剂可改善少数载流子扩散长度并用于基本扩散机理的研究。
6. A pilot study on the use of a perfluorohexyloctane/silicone oil solution as a heavier than water internal tamponade agent [O] . D Wong, J C Van Meurs, T Stappler, 2005

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7. Competition between gettering by implantation-induced cavities in silicon and internal gettering associated with SiO{sub 2} precipitation [O] . McHugo, S.A., Weber, E.R., Myers, S.M., 1996

机译：硅中注入诱导空穴吸杂与siO {sub 2}沉淀相关的内部吸杂之间的竞争
8. Competition between gettering by implantation-induced cavities in silicon and internal gettering associated with SiO{sub 2} precipitation [R] . 1996

机译：硅中注入诱导空穴吸杂与siO {sub 2}沉淀相关的内部吸杂之间的竞争

Study of Oxygen Precipitation and Internal Gettering in Heavily As-doped Silicon Crystal

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