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首页> 外文会议>International Symposium on Plasma Processing XIII, May 14-19, 2000, Toronto, Canada >Comparison of Two Plasmas for Deep Trench Silicon Etching Process
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Comparison of Two Plasmas for Deep Trench Silicon Etching Process

机译：深沟槽硅刻蚀工艺中两种等离子体的比较

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We found that the high aspect ratio silicon etch is strongly dependent on the open silicon area. The trench depth reduces as the open silicon area reduces. Furthermore, this etch process exhibited aspect ratio dependent etching behavior that was attributed to reduction of ioneutral flux reaching the bottom of trench, implying that the trench depth does not increase linearly with respect to etch time. The etch rate of silicon with SF_6-based plasmas is found to be lower compared to NF_3-based plasma, presumably due to lower DC bias voltage developed at the surface of the wafer. Furthermore, the etch rate of oxide mask is also found to be lower with SF_6-based plasma than with NF_3-based plasma. The rate of change of the average etch rate of silicon with respect to aspect ratio seems to be higher for NF_3-based plasma than for SF6-based plasma, presumably due to the depletion of free fluorine reaching the bottom of the trench.
机译：我们发现，高纵横比的硅蚀刻在很大程度上取决于开放的硅面积。沟槽深度随着开口硅面积的减小而减小。此外，该蚀刻工艺表现出取决于纵横比的蚀刻行为，这归因于离子/中性通量到达沟槽底部的减少，这意味着沟槽深度相对于蚀刻时间不会线性增加。发现与基于NF_3的等离子体相比，具有基于SF_6的等离子体的硅的蚀刻速率更低，这大概是由于在晶片表面形成的较低的DC偏置电压。此外，还发现基于SF_6的等离子体的氧化物掩模的蚀刻速率低于基于NF_3的等离子体的氧化物掩模的蚀刻速率。相对于长宽比，基于NF_3的等离子体的硅的平均蚀刻速率的变化速率似乎比基于SF6的等离子体的硅的平均蚀刻速率的变化速率更高，这可能是由于到达沟槽底部的游离氟的耗尽所致。

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