A Method of In-Situ Monitoring Oxide/Nitride Etch Selectivity

机译：原位监测氧化物/氮化物刻蚀选择性的方法

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摘要

A new method of in-situ etch selectivity monitoring of oxide to nitride is proposed by using optical emission spectroscopy. The etch selectivity of oxide to nitride can be monitored through the optical emission signal of SiF and CN in-situ at real time. It is found that the ratio of variations of optical emission intensities of SiF and CN around endpoint is proportional to the etch selectivity of oxide to nitride.

机译：提出了一种利用光发射光谱法监测氧化物对氮化物的刻蚀选择性的新方法。可以通过SiF和CN的光发射信号实时监测氧化物对氮化物的蚀刻选择性。已经发现，SiF和CN的光发射强度在终点附近的变化比例与氧化物对氮化物的蚀刻选择性成比例。

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来源
《International Symposium on Plasma Processing XIII, May 14-19, 2000, Toronto, Canada》|2000年|p.124-128|共5页
会议地点 Toronto(CA);Toronto(CA)
作者
Sunfei Fang; Alois Gutmann; Bertrand Flietner;
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作者单位

Infineon Technology East Fishkill, NY;

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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
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A Method of In-Situ Monitoring Oxide/Nitride Etch Selectivity

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