EXPERIMENTAL STUDY OF GEOMETRY STRUCTURE DEPENDENT CHARGING OF THE DIELECTRIC SURFACE DURING PLASMA ETCHING

机译：等离子体刻蚀过程中介电层几何结构相关电荷的实验研究

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Geometry structure dependent charging, caused by the difference in the angular distribution functions for electron and ions, has been investigated using a Kelvin probe. The measured surface potential is not a monotonic function of etch depth, but has a maximum at a certain depth. The surface potential changes only slightly with changes in the bias power for a high density etcher or with changes in power for an RIE system in the high power range. This indicates that the surface charge leaks, and charge exchange between the bottom of the hole and the top corner is the most likely channel of this leakage. When the remaining oxide thickness is less than approximately 0.2μm, the results suggest that the surface potential also affected by a charge leakage mechanism that includes charge leakage between the bottom of a hole and the Si substrate.

机译：已经使用开尔文探针研究了由电子和离子的角度分布函数的差异引起的几何结构相关的电荷。测得的表面电势不是蚀刻深度的单调函数，而是在一定深度处具有最大值。对于高密度蚀刻机，表面电势仅随偏压功率的变化而变化，而对于高功率范围内的RIE系统，其表面电势仅随功率的变化而变化。这表明表面电荷泄漏，并且孔的底部和顶部拐角之间的电荷交换是这种泄漏的最可能通道。当剩余氧化物厚度小于约0.2μm时，结果表明表面电势还受电荷泄漏机制的影响，该电荷泄漏机制包括孔的底部与Si衬底之间的电荷泄漏。

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来源
《International Symposium on Plasma Processing XIII, May 14-19, 2000, Toronto, Canada》|2000年|p.160-167|共8页
会议地点 Toronto(CA);Toronto(CA)
作者
M. K. Abatchev; B. J. Howard; K. G. Donohoe; G. T. Blalock;
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Micron Technology, Inc. 8000 S. Federal Way, PO Box 6 Boise, ID, USA 83707-0006;

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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
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EXPERIMENTAL STUDY OF GEOMETRY STRUCTURE DEPENDENT CHARGING OF THE DIELECTRIC SURFACE DURING PLASMA ETCHING

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