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首页> 外文学位 >Plasma etching of dielectric materials using inductively and capacitively coupled fluorocarbon discharges: Mechanistic studies of the surface chemistry.
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Plasma etching of dielectric materials using inductively and capacitively coupled fluorocarbon discharges: Mechanistic studies of the surface chemistry.

机译：使用电感和电容耦合的碳氟化合物放电对电介质材料进行等离子蚀刻：表面化学机理的研究。

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摘要

Fluorocarbon (FC) plasmas are commonly used for dielectric materials etching. Our initial work was performed using an inductively coupled plasma (ICP) system to produce FC discharges. We first examined the effect of CO addition to C4F8 or C4F8/Ar plasmas for selective etching of organosilicate glass (OSG), which is a typical low k (LK) material over etch stop layers. The chemical activity of CO when added to either C4F8 Or C4F8/80% Ar can be understood in terms of the CO dissociation energy threshold relative to energies of inelastic electron collision processes of the dominant feedgas component. We also studied the plasma etching behavior of 193 nm and 248 nm photoresist in FC discharges used for dielectric etching. We showed that ion-enhanced selective volatilization of carbonyl groups of the 193 nm photoresist polymer backbone which is absent for the 248 nm material, along with modulation of the ion-interaction with the photoresist material by fluorocarbon surface passivation, may be responsible for the introduction of pronounced surface roughness of 193 nm photoresists.; Current industrial efforts are aimed primarily at capacitively coupled plasma (CCP) systems. A home-built dual frequency CCP reactor was used to investigate additional aspects of dielectric materials plasma etching. We designed a gap structure to simulate sidewall surface processes occurring during high aspect ratio trench etching. In particular, we showed that the FC film deposition rates measured using the gap structure qualitatively correlate with the trench sidewall angles produced in LK dielectrics in both C 4F8/Ar and CF4/H2 based gas chemistries: The lower the FC deposition rate on the sidewall, the more vertical the trench sidewall. This approach was used to study surface chemistry aspects of FC film deposition with and without ion bombardment. For the gap structure film deposition takes place without ion bombardment and we observed a novel FC film growth phenomenon in pure C4F8 plasmas at high pressure: Two distinct chemical surface portions were shown to exist simultaneously, one consisting primarily of C-F2 and C-F3 bonding, and the other of C-C/C-H bonding. An explanation consistent with all of our data is localized CF2 attachment to growing FC chains.
机译：氟碳（FC）等离子体通常用于介电材料蚀刻。我们的最初工作是使用感应耦合等离子体（ICP）系统进行的，以产生FC放电。我们首先研究了向C4F8或C4F8 / Ar等离子体中添加CO对有机硅玻璃（OSG）的选择性刻蚀的影响，有机硅玻璃是刻蚀停止层上的典型低k（LK）材料。当将CO添加到C4F8或C4F8 / 80％Ar中时，可以根据相对于主要原料气组分的非弹性电子碰撞过程的能量的CO离解能阈值来理解CO的化学活性。我们还研究了用于介电刻蚀的FC放电中193 nm和248 nm光刻胶的等离子体刻蚀行为。我们显示了248 nm材料所缺少的193 nm光致抗蚀剂聚合物主链上羰基的离子增强选择性挥发，以及碳氟化合物表面钝化对与光致抗蚀剂材料的离子相互作用的调节，可能是造成这种引入的原因193nm光致抗蚀剂的明显的表面粗糙度。当前的工业努力主要针对电容耦合等离子体（CCP）系统。家用双频CCP反应器用于研究电介质材料等离子体刻蚀的其他方面。我们设计了一种间隙结构来模拟在高深宽比沟槽蚀刻期间发生的侧壁表面过程。尤其是，我们表明，使用间隙结构测量的FC膜沉积速率与基于C 4F8 / Ar和CF4 / H2的气体化学中LK电介质中产生的沟槽侧壁角在质量上相关：侧壁上的FC沉积速率越低，沟槽侧壁越垂直。该方法用于研究有无离子轰击的FC膜沉积的表面化学方面。由于间隙结构的膜沉积是在没有离子轰击的情况下发生的，因此我们在高压下观察到纯C4F8等离子体中出现了一种新的FC膜生长现象：显示了同时存在两个不同的化学表面部分，其中一个主要由C-F2和C-F3组成键合，另一个是CC / CH键合。与我们所有数据一致的一种解释是，CF2局部附着在不断增长的FC链上。

著录项

  • 作者

    Ling, Li.;

  • 作者单位

    University of Maryland, College Park.;

  • 授予单位 University of Maryland, College Park.;
  • 学科 Engineering Materials Science.
  • 学位 Ph.D.
  • 年度 2006
  • 页码 207 p.
  • 总页数 207
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 工程材料学;
  • 关键词

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