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Physical Failure Analysis Techniques and Studies on Vertical ShortIssue of 65nm Devices

机译:65nm器件的物理故障分析技术和垂直短路问题的研究

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摘要

With the scaling down of semiconductor devices tornnanometer range, physical failure analysis (PFA) has becomernmore challenging. In this paper, a different method ofrnperforming PFA to identify a physical vertical short of inter-metalrnlayer in nanoscale devices is discussed. The proposedrnchemical etch and backside chemical etch PFA techniquesrnhave the advantages of sample preparation evenness andrnefficiency compared to conventional PFA. This techniquernalso offers a better understanding of the failure mechanismrnand is easier to execute in identifying the vertical short issue.
机译:随着半导体器件缩小到纳米级范围,物理故障分析(PFA)变得更具挑战性。在本文中,讨论了一种不同的执行PFA的方法来识别纳米级器件中金属间层的物理垂直短接。与传统的PFA相比,所提出的化学蚀刻和背面化学蚀刻PFA技术具有样品制备均匀性和效率高的优点。该技术还可以更好地理解故障机理,并且在识别垂直短问题方面更容易执行。

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