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首页> 外文会议>ISTFA 2008 : Conference proceedings from the 34th international symposium for testing and failure analysis >Transient latch-up analysis of power control device with combined lightemission and backside transient interferometric mapping methods
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Transient latch-up analysis of power control device with combined lightemission and backside transient interferometric mapping methods

机译：结合光发射和背面瞬态干涉映射方法的功率控制器件的瞬态闩锁分析

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摘要

A case study of a transient induced latch-up (TLU) problem isrnpresented, which was identified during the development of arn60 V, 0.8 μm BiCMOS power control device. The mechanismrnwas characterized by controlled transient latch-up testing andrnfound to be fairly unusual, being triggered by a fast decreasingrnnot necessarily negative spike or glitch on the positive supplyrnpin. Emission Microscopy (EMMI) and TransientrnInterferometric Mapping (TIM) successfully located thernparasitic silicon controlled rectifiers (SCR) structure. TIM isrnan infra-red laser beam based technique for back side analysis.rnTIM analysis enables concurrent imaging of carrier injectionrnand heating in nanosecond timescale providing more detailedrninformation on the SCR action than more often used staticrnphoton emission or dynamic TLP / PICA imaging.
机译：提出了一个瞬态感应闭锁（TLU）问题的案例研究，该问题在arn60 V，0.8μmBiCMOS功率控制器件的开发过程中被确定。该机制的特点是受控的瞬态闩锁测试，并且发现它是非常不寻常的，它是由快速下降（不一定是正电源引脚上的负尖峰或毛刺）触发的。发射显微镜（EMMI）和瞬态干涉图（TIM）成功地确定了寄生硅可控整流器（SCR）的结构。 TIM基于Irnan红外激光束的背面分析技术。TIM分析可在十亿分之一秒的时间内对载流子注入和加热同时进行成像，与更常使用的静态光子发射或动态TLP / PICA成像相比，可提供更详细的SCR作用信息。

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  • 来源
  • 会议地点 Portland OR(US);Portland OR(US)
  • 作者

    M. Heer; rnD. Pogany; rnM. Street; rnI. Smith; rnF. Riedlberger; rnD. Bonfert; rnH. A. Gieser;

  • 作者单位

    Institute for Solid State Electronics, Vienna University of Technology, 1040 Vienna, Austria;

    Institute for Solid State Electronics, Vienna University of Technology, 1040 Vienna, Austria;

    Diodes Incorporated, Zetex Technology Park, OL9 9LL Oldham, United Kingdom;

    Diodes Incorporated, Zetex Technology Park, OL9 9LL Oldham, United Kingdom;

    Diodes Incorporated, Zetex Technology Park, OL9 9LL Oldham, United Kingdom;

    PS ATIS Analysis Test of Integrated Systems, Fraunhofer-IZM, Hansastr. 27d, 80686 Munich, Germany;

    PS ATIS Analysis Test of Integrated Systems, Fraunhofer-IZM, Hansastr. 27d, 80686 Munich, Germany;

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