Laser Scanning Localization Technique for Fast Analysisof High Speed DRAM devices

机译：激光扫描定位技术可快速分析高速DRAM设备

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Soft defect localization (SDL) is a method of laserrnscanning microscopy that utilizes the changing pass/failrnbehavior of an integrated circuit under test andrntemperature influence. Historically the pass and failrnstates are evaluated by a tester that leads to long andrnimpracticable measurement times for dynamic randomrnaccess memories (DRAM). The new method using arnhigh speed comparison device allows SDL imagernacquisition times of a few minutes and a localization ofrnfunctional DRAM fails that are caused by defects in thernDRAM periphery that has not been possible before. Thisrnnew method speeds up significantly the turn-around timernin the failure analysis (FA) process compared tornknowledge based FA.

机译：软缺陷定位（SDL）是一种激光扫描显微镜的方法，该方法利用了受测集成电路和受温度影响下变化的通过/失败行为。过去，测试人员会评估通过和失败状态，这会导致动态随机存取存储器（DRAM）的测量时间过长且无法实施。使用arnhigh高速比较设备的新方法可以实现几分钟的SDL图像获取，并且功能性DRAM的定位失败是由于DRAM外围中以前无法实现的缺陷所致。与基于知识的FA相比，这种新方法大大缩短了故障分析（FA）过程中的周转时间。

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来源
《ISTFA 2008 : Conference proceedings from the 34th international symposium for testing and failure analysis》|2008年|227-232|共6页
会议地点 Portland OR(US);Portland OR(US)
作者
Martin Versen; rnAchim Schramm; rnJan Schnepp; rnSascha Hoch; rnTapan Vikas; rnDorina Diaconescu;
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Qimonda AG, Am Campeon 1-12, D-85579 Neubiberg, Germany;

Qimonda AG, Am Campeon 1-12, D-85579 Neubiberg, Germany;

Qimonda AG, Am Campeon 1-12, D-85579 Neubiberg, Germany;

Qimonda AG, Am Campeon 1-12, D-85579 Neubiberg, Germany;

Qimonda AG, Am Campeon 1-12, D-85579 Neubiberg, Germany;

Infineon AG, Otto-Hahn-Ring 6, D-81739 München, Germany;

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Laser Scanning Localization Technique for Fast Analysisof High Speed DRAM devices

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