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首页> 外文会议>Joint 2015 e-Manufacturing amp; Design Collaboration Symposium 2015 and 2015 International Symposium on Semiconductor Manufacturing >Instantaneous generation of many flaked particles caused by micro-arc discharge and detection method using load impedance monitoring system — Yuji Kasashima
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Instantaneous generation of many flaked particles caused by micro-arc discharge and detection method using load impedance monitoring system — Yuji Kasashima

机译：由微弧放电引起的许多片状颗粒的瞬时生成以及使用负载阻抗监控系统的检测方法— shima岛裕二

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摘要

In volume manufacture of LSI, particle contamination in plasma etching equipment is among the most serious problems [1]. The particles cause short circuit of LSI and significantly lower production yield. Mass-production equipment must be stopped for cleaning of etching chambers periodically, which gives rise to the reduction in overall equipment efficiency (OEE). Development of particle-free processes and equipment is crucially important to reduce production cost. In plasma etching for the mass production of LSI, etching reaction products adhere to the inner chamber walls, gradually forming films as wafers are processed. During the etching process, a few particles are constantly generated by flaking of the deposited films due to electric field stress that acts boundary between the inner wall and the film [2]. On the other hands, serious contamination caused by many particles sometimes abruptly occurs. This causes a number of defective LSI devices and significantly decreases the production yield and OEE. Micro-arc discharge is considered as a possible cause of the sudden generation from the situation of damages in the chamber, however, the mechanism has not been understood. In this study, to reveal the mechanism in detail, we investigate the relationship between the instantaneous generation of flaked particles and micro-arc discharge under mass-production conditions. Then, a practical detection method has been developed.
机译：在大规模生产LSI中，等离子蚀刻设备中的颗粒污染是最严重的问题之一[1]。这些颗粒会导致LSI短路并大大降低产量。必须停止批量生产设备以定期清洁蚀刻室，这会降低总体设备效率（OEE）。开发无颗粒工艺和设备对于降低生产成本至关重要。在大规模生产LSI的等离子蚀刻中，蚀刻反应产物附着在内腔壁上，随着晶片的处理逐渐形成膜。在蚀刻过程中，由于电场应力作用于内壁和薄膜之间的边界[2]，沉积薄膜的剥落会不断产生一些颗粒。另一方面，有时会突然发生由许多颗粒引起的严重污染。这导致许多有缺陷的LSI器件，并显着降低了产量和OEE。微电弧放电被认为是由于腔室内损坏的情况而突然产生的可能原因，然而，其机理尚不清楚。在这项研究中，为详细揭示机理，我们研究了在大量生产条件下片状颗粒的瞬时生成与微弧放电之间的关系。然后，开发了一种实用的检测方法。

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