Advanced high accuracy scanning electron microscopy review methodology by virtual defect — Yiting Kuo

机译：虚拟缺陷的先进高精度扫描电子显微镜检查方法—郭一亭

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The exact location of defect is very important for review SEM. It is necessary to provide high accuracy defect review with line width shrinkage in manufacture of semiconductor. In this paper, we proposed a new methodology of defect deskew by virtual defects (VD) which provide high accuracy defect review. Furthermore, we also compare the result of different inspection modes and different pixel sizes.

机译：缺陷的确切位置对于审查SEM非常重要。在半导体制造中，必须提供具有线宽收缩的高精度缺陷检查。在本文中，我们提出了一种通过虚拟缺陷（VD）进行缺陷去歪斜的新方法，该方法可提供高精度的缺陷检查。此外，我们还比较了不同检查模式和不同像素大小的结果。

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来源
《Joint 2015 e-Manufacturing amp; Design Collaboration Symposium 2015 and 2015 International Symposium on Semiconductor Manufacturing》|2015年|1-4|共4页
会议地点 Taipei(CT)
作者
Yiting Kuo; Yi-Lung Fang; Hsiang-Chou Liao; Ling-Wu Yang; Tahone Yang; Kuang-Chao Chen;
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作者单位

Technol. Dev. Center, Macronix Int. Co., Ltd., Hsinchu, Taiwan;

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会议组织
原文格式 PDF
正文语种 eng
中图分类
关键词
flaw detection; inspection; scanning electron microscopy; semiconductor device manufacture; shrinkage; SEM review; defect deskew; defect location; inspection; line width shrinkage; scanning electron microscopy review methodology; semiconductor manufacture; virtual defects; Accuracy; Arrays; Finite element analysis; Inspection; Joints; Scanning electron microscopy; Defect Deskew; Defect Offset; Virtual Defect;

机译：缺陷检测;检查;扫描电子显微镜;半导体器件制造;收缩率; SEM审查;缺陷偏斜;缺陷位置;检查;线宽收缩;扫描电子显微镜审查方法;半导体制造;虚拟缺陷;精度;阵列;有限元分析;检验;接头;扫描电镜;缺陷偏斜;缺陷偏移;虚拟缺陷;;

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机译：消毒剂对印模材料和石膏施放的精度，质量和表面结构的影响：使用光学显微镜，扫描电子显微镜和微计算机断层扫描的对比研究
3. Defect analysis using scanning acoustic microscopy for bonded microelectronic components with extended resolution and defect sensitivity [J] . Brand Sebastian, Vogg Guenther, Petzold Matthias Microsystem technologies . 2018,第1期

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4. Advanced high accuracy scanning electron microscopy review methodology by virtual defect — Yiting Kuo [C] . Yiting Kuo, Yi-Lung Fang, Hsiang-Chou Liao, Joint 2015 e-Manufacturing Design Collaboration Symposium 2015 . 2015

机译：通过虚拟缺陷的高级高精度扫描电子显微镜检查方法 - Yiting Kuo
5. Capturing the Defects of Ga2O3 and Delafossites Using Scanning Transmission Electron Microscopy [D] . Chang, Celesta Lim. 2020

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6. Building and exploring libraries of atomic defects in graphene: Scanning transmission electron and scanning tunneling microscopy study [O] . Maxim Ziatdinov, Ondrej Dyck, Xin Li, 2019

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7. Helium ion microscopy and energy selective scanning electron microscopy – two advanced microscopy techniques with complementary applications [O] . Rodenburg, C., Jepson, M.A.E., Boden, Stuart A., 2014

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8. Direct imaging of the atomic structure and chemistry of defects and interfaces by Z-contrast STEM (scanning transmission electron microscopy). [R] . Pennycook, S. J., Chisholm, M. F., Jesson, D. E., 1990

机译：通过Z对比sTEm（扫描透射电子显微镜）直接成像原子结构和缺陷和界面的化学。

Advanced high accuracy scanning electron microscopy review methodology by virtual defect — Yiting Kuo

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