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首页> 外文会议>Joint 2015 e-Manufacturing amp; Design Collaboration Symposium 2015 and 2015 International Symposium on Semiconductor Manufacturing >Dishing and erosion amount prediction according pattern density calculation algorithm in 3D design layout — Kuang-Wei Chen
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Dishing and erosion amount prediction according pattern density calculation algorithm in 3D design layout — Kuang-Wei Chen

机译：在3D设计布局中根据图案密度计算算法进行的成菜和侵蚀量预测—陈匡威

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摘要

Chemical Mechanical Planarization (CMP) become a mainstream process in semiconductor industry, it is a key technology to generate flat and smooth surface at several critical steps in the manufacturing processes. The planarization performance is influenced by topography characteristics, line/space width, pattern density, slurry chemistry, rotation speed, PAD type, force/pressure, etc. However, as device continuous shrink, CMP process becomes more challengeable to achieve planarization. There exist two common issues that often occur at different pattern densities and line widths are dishing and erosion, as shown in Fig. 1. In STI CMP, dishing is defined as the oxide loss relative to the level of the neighboring nitride space, and erosion refers to the nitride loss relative to the nitride level of the neighboring area. Wide trenches or open structures usually enhance the dishing issue, while dense trenches lead to more erosion. Nitride erosion exposes the underlying active devices will lead to device failure; on the other hand, oxide dishing results in poor isolation.
机译：化学机械平面化（CMP）成为半导体行业的主流工艺，它是在制造过程中的多个关键步骤上生成平坦表面的关键技术。平坦化性能受形貌特征，线/间隔宽度，图案密度，浆料化学性质，旋转速度，PAD类型，力/压力等影响。但是，随着器件的连续收缩，CMP工艺对于实现平坦化变得更具挑战性。如图1所示，在不同的图案密度和线宽下经常会出现两个常见问题：凹陷和腐蚀。在STI CMP中，凹陷定义为相对于相邻氮化物空间水平的氧化物损失和腐蚀术语“氮化物损失”是指相对于相邻区域氮化物含量的氮化物损失。较宽的沟槽或开放结构通常会增加凹陷问题，而密集的沟槽会导致更多腐蚀。氮化物腐蚀暴露了潜在的有源设备，将导致设备故障；另一方面，氧化物凹陷导致隔离不良。

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