Formation of USJ with cluster implants for 32nm node and beyond

机译：用32nm及以上节点的簇状注入形成USJ

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Cluster Ion implantation is an attractive alternative approach to realize applications in semiconductor devices at 32 nm node and beyond. Cluster ions have a special property of making self-amorphous layer even at a lower dose. Here we will discuss the self-amorphizing properties of heavier cluster ion species like B₃₆, B₁₈ and C₁₆ and discuss how these could be substituted for various implants in devices like low energy SDE, PAI and co-implant applications. For applications with ultra-low energy requirements below 500 eV, B₃₆ species can provide both process and throughput advantage without any device related issues due to energy contamination.

机译：簇离子注入是一种有吸引力的替代方法，可实现在32 nm及更高节点的半导体器件中的应用。簇离子具有即使在较低剂量下也能形成自非晶层的特殊性质。在这里，我们将讨论较重的簇离子物种（如B _{36 ，B _{18 和C _{16 ）的自非晶化性质，并讨论如何实现替代了低能量SDE，PAI和共植入应用中的各种植入物。对于低于500 eV的超低能量要求的应用，B _{36 物种既可提供工艺优势，又可提供产量优势，而不会因能量污染而引起任何与设备相关的问题。}}}}

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来源
《Junction Technology, 2009. IWJT 2009》|2009年|19-24|共6页
会议地点 Kyoto(JP);Kyoto(JP)
作者
Sekar K.; Krull W.;
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作者单位

SemEquip Inc., North Billerica, MA, USA;

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原文格式 PDF
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ion implantation; semiconductor doping; cluster implants; cluster ion implantation; energy contamination; semiconductor device; size 32 nm;

机译：离子注入;半导体掺杂;团簇注入;团簇离子注入;能量污染;半导体器件;尺寸32 nm;

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1. 32nm Node Usj Formation Using Rapid Process Optimization Metrology [J] . John O. Borland, Yoji Kawasaki, Jeffri Halim, Solid state technology . 2008,第7期

机译：使用快速工艺优化计量技术的32nm节点Usj形成
2. Alternative USJ formation and characterization methods for 45 nm node technology [J] . Borland JO Nuclear Instruments & Methods in Physics Research. B, Beam Interactions with Materials and Atoms . 2005,第1a2期

机译：用于45 nm节点技术的替代USJ形成和表征方法
3. RNM Calculation of 6T SRAM Cell in 32nm Process Node based on Current and Voltage Information [J] . K. S. Sreekala, S. Krishnakumar Indian Journal of Science and Technology . 2017,第29期

机译：基于电流和电压信息的32nm工艺节点中的6T SRAM单元的RNM计算
4. Formation of USJ with cluster implants for 32nm node and beyond [C] . Karuppanan Sekar, Wade Krull International Workshop on Junction Technology . 2009

机译：用簇植入形成32nm节点的USJ的形成
5. Effect of Ion Flux (Dose Rate) in Source-Drain Extension Ion Implantation for 10-nm Node FinFET and Beyond on 300/450mm Platforms [D] . Shen, Ming-Yi. 2017

机译：离子通量（剂量率）在10 nm节点FinFET上的源漏扩展离子注入中的作用以及在300 / 450mm平台上的影响
6. Clustering of Na+ channels and node of Ranvier formation in remyelinating axons [O] . S Dugandzija-Novakovic, AG Koszowski, SR Levinson, 1995

机译：髓鞘再生过程中Na +通道的聚集和Ranvier形成的结节
7. Modification in Weighted Clustering Algorithm for Faster Clustering Formation by Considering Absolute Attributes of Mobile Nodes and Greedy Method for Role Selection of Mobile Nodes in MANET [O] . Vijayanand Kumar 2016

机译：考虑移动节点绝对属性的加权聚类算法修改快速聚类，maNET中移动节点角色选择贪婪方法
8. Formation of Nanometallic Clusters in Silica by Ion Implantation [R] . Ila, D. 1997

机译：离子注入在二氧化硅中形成纳米金属团簇

Formation of USJ with cluster implants for 32nm node and beyond

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