Plasma Doping for 3D and 2D devices

机译：3D和2D设备的等离子掺杂

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Self-Regulation Plasma Doping (SRPD) with B₂H₆/Helium gas plasma has been developed to provide precisely controllable ultra-shallow junctions for planar FET and conformal junctions for fins in the same time. Manufacturing level of process controllability (<1% on dose) and advantage on the devices of SRPD has been achieved with FinFETs and planar pMOSFETs.

机译：开发了具有B _{2 H _{6 /氦气等离子体的自调节等离子体掺杂（SRPD），可为平面FET提供精确可控的超浅结，并为鳍片提供共形结在同一时间。 FinFET和平面pMOSFET已实现了工艺可控制性的制造水平（剂量的<1％）和SRPD器件的优势。}}

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来源
《Junction Technology, 2009. IWJT 2009》|2009年|91-95|共5页
会议地点 Kyoto(JP);Kyoto(JP)
作者
Mizuno B.;
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Ultimate Junction Technol. Inc., Moriguchi, Japan;

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MOSFET; plasma materials processing; semiconductor doping; semiconductor junctions; 2D devices; 3D devices; conformal junctions; controllable ultra-shallow junctions; gas plasma; planar FET; process controllability; self-regulation plasma doping;

机译：MOSFET;等离子材料处理;半导体掺杂;半导体结; 2D器件; 3D器件;保形结;可控的超浅结;气体等离子体;平面FET;工艺可控性;自调节等离子体掺杂;

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专利

1. Growth of SiC bulk crystals for application in power electronic devices - process design, 2D and 3D X-ray in situ visualization and advanced doping [J] . Wellmann Peter, Neubauer Georg, Fahlbusch Lars, Crystal Research and Technology: Journal of Experimental and Industrial Crystallography . 2015,第1期

机译：SiC块状晶体的生长，用于电力电子设备-工艺设计，2D和3D X射线原位可视化以及先进的掺杂
2. On the 2D or 3D coupled analytical and finite element analysis of eddy current and thermal problems in plasma devices [J] . Feliachi M., Benzerga D. IEEE Transactions on Magnetics . 1996,第3期

机译：关于等离子设备中涡流和热问题的2D或3D耦合分析和有限元分析
3. Code for the 3D Simulation of Nanoscale Semiconductor Devices, Including Drift-Diffusion and Ballistic Transport in 1D and 2D Subbands, and 3D Tunneling [J] . G. FIORI, G. IANNACCONE Journal of Computational Electronics . 2005,第1a2期

机译：纳米级半导体器件的3D模拟代码，包括1D和2D子带中的漂移扩散和弹道运输，以及3D隧穿
4. Junction Technology for 2D and 3D devices-Self Regulation Plasma Doping SRPD [C] . Bunji Mizuno China semiconductor technology international conference 2010 . 2010

机译：2D和3D器件的结技术-自调节等离子体掺杂SRPD
5. Growth and Nb-Doping of MoS2 Towards Novel 2D/3D Heterojunction Bipolar Transistors. [D] . Lee, Edwin W. 2016

机译：MoS2向新型2D / 3D异质结双极晶体管的生长和Nb掺杂。
6. Doped Halloysite Nanotubes for Use in the 3D Printing of Medical Devices [O] . Jeffery A. Weisman, Udayabhanu Jammalamadaka, Karthik Tappa, 2017

机译：用于医疗设备3D打印的掺杂埃洛石纳米管
7. Growth of SiC bulk crystals for application in power electronic devices - process design, 2D and 3D X-ray in situ visualization and advanced doping [O] . Wellmann, P., Neubauer, G., Fahlbusch, L., 2015

机译：用于电力电子器件的siC块状晶体的生长 - 工艺设计，2D和3D X射线原位可视化和先进的掺杂
8. 2D Materials and Devices Beyond Graphene Science and Emerging Technology of 2D Atomic Layered Materials and Devices. [R] . Tonouchi, M. 2018

机译：2D材料和器件超越石墨烯科学和二维原子分层材料和器件的新兴技术。

Plasma Doping for 3D and 2D devices

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