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首页> 外文会议>Laser-based micro- and nanoprocessing IX >Direct growth of patterned grapheme on SiC(0001) surfaces by KrF excimer-laser irradiation
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Direct growth of patterned grapheme on SiC(0001) surfaces by KrF excimer-laser irradiation

机译：KrF准分子激光辐照在SiC（0001）表面上直接生长图案化的石墨字素

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摘要

A novel method of direct growth of patterned graphene on SiC(0001) surfaces using KrF excimer-laser irradiation is proposed. It relies on the local sublimation of Si atoms within the irradiated area to induce graphene growth through a rearrangement of surplus carbon. A laser with a wavelength of 248 nm was pulsed with a duration of 55 ns and a repetition rate of 100 Hz that was used to graphene forming. Following laser irradiation of 1.2 J/cm~2 (5000 shots) under an Ar atmosphere (500 Pa), characteristic graphene peaks were observed in the Raman spectra of the irradiated area, thereby confirming the formation of graphene. The ratio between the graphene bands in the Raman spectra was used to estimate the grain size at 61.3 nm. Through high-resolution transmission electron microscopy, it was confirmed that two layers of graphene were indeed formed in the laser irradiated region. Using this knowledge, we also demonstrate that line-and-space (L&S) graphene patterns with a pitch of 8 μm can be directly formed using our method.
机译：提出了一种使用KrF准分子激光在SiC（0001）表面直接生长图案化石墨烯的新方法。它依赖于被辐照区域内Si原子的局部升华，通过剩余碳的重排来诱导石墨烯的生长。脉冲波长为248 nm的激光以55 ns的持续时间和100 Hz的重复频率脉冲化，用于形成石墨烯。在Ar气氛（500Pa）下以1.2J / cm〜2（5000次）进行激光照射后，在被照射区域的拉曼光谱中观察到特征石墨烯峰，从而确认了石墨烯的形成。拉曼光谱中石墨烯带之间的比率用于估计61.3 nm的晶粒尺寸。通过高分辨率透射电子显微镜，证实在激光照射区域中确实形成了两层石墨烯。利用这一知识，我们还证明了使用我们的方法可以直接形成间距为8μm的线和间隔（L＆S）石墨烯图案。

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