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首页> 外文会议>Lithography for Semiconductor Manufacturing >Performance of 193-nm resists based on alicyclic methacrylate and cyclo-olefin systems
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Performance of 193-nm resists based on alicyclic methacrylate and cyclo-olefin systems

机译：基于脂环式甲基丙烯酸酯和环烯烃体系的193 nm抗蚀剂的性能

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Abstract: Among the chemistries/polymers reported for the 193nm photoresist applications, methacrylate copolymers consisting of 2-methyl-2-adamantane methacrylate and mevalonic lactone methacrylate and cycloolefin polymers derived from derivatives of norbornene have shown promising results. We have studied the lithographic properties of these two but different promising chemistries. Both system offer linear resolutions down to 0.13 $mu@m using conventional 193 nm illumination and high sensitivity at standard developer conditions. While the methacrylate based system shows best performance on substrates with bottom coats, the cycloolefin-Maleic anhydride alternate copolymer based resists performs well on bare silicon as well as substrates with bottom coats. The etch rates of the methacrylate and cycloolefin based resists were found to be 1.4 and 1.3 times relative to that of KrF resist APEX-E. Further, new polymers consisting of isobornyl and alkyl ether chains on the ester groups of norbornene carboxylate were made in order to decrease the glass-transition temperatures of the norbornene-maleic anhydride type polymers. These results will be included and discussed in detail. !8
机译：摘要：在报道的用于193nm光刻胶的化学物质/聚合物中，由2-甲基-2-金刚烷甲基丙烯酸甲酯和甲基戊酸内酯组成的甲基丙烯酸酯共聚物和降冰片烯衍生物衍生的环烯烃聚合物已显示出令人鼓舞的结果。我们研究了这两种但有前途的化学方法的光刻性能。两种系统均采用常规的193 nm照明，线性分辨率低至0.13μm@ m，在标准显影条件下具有高灵敏度。尽管基于甲基丙烯酸酯的体系在带底涂层的基材上表现出最佳性能，但基于环烯烃-马来酸酐交替共聚物的抗蚀剂在裸硅以及带底涂层的基材上表现良好。发现基于甲基丙烯酸酯和环烯烃的抗蚀剂的蚀刻速率是KrF抗蚀剂APEX-E的蚀刻速率的1.4和1.3倍。此外，为了降低降冰片烯-马来酸酐型聚合物的玻璃化转变温度，制备了由在降冰片烯羧酸酯的酯基上的异冰片基和烷基醚链组成的新聚合物。这些结果将包括在内并进行详细讨论。 ！8

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