ZnO Field-effect Transistor Fabricated by RF Magnetron Suputtering and Lithographic/Wet Etching Processes

机译：射频磁控管吸塑和光刻/湿蚀刻工艺制造的ZnO场效应晶体管

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The fabrication of zinc oxide (ZnO)based thin-film field-effect transistors (TFTs) on p-Si substrates by rf magnetron sputtering, photolithography and wet etching processes was presented. Bottom-gate-type thin film transistors using ZnO as an active channel layer were constructed, and their properties were characterized by atomic force microscope, X-ray diffraction and I-V measurements. The fabricated ZnO transistors exhibited enhancement mode characteristics with the on-to-off current ratio of ～10~5 and the threshold voltage of 10V. It is believed that the ZnO TFTs fabricatd by the simple and low-cost technique could be applicable to electronic devices.

机译：提出了通过射频磁控溅射，光刻和湿法刻蚀工艺在p-Si衬底上制备基于氧化锌（ZnO）的薄膜场效应晶体管（TFT）的方法。构造了以ZnO为有源沟道层的底栅型薄膜晶体管，并通过原子力显微镜，X射线衍射和I-V测量来表征其特性。所制备的ZnO晶体管表现出增强模式特性，开关电流比为〜10〜5，阈值电压为10V。相信通过简单和低成本技术制造的ZnO TFT可以适用于电子设备。

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来源
《Materials engineering for advanced technologies》|2011年|p.605-608|共4页
会议地点 Singapore(SG);Singapore(SG)
作者
Hongyu Ma; Enjie Ding; Zengliang Shi;
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作者单位

Research Center for Internet of Things, China University of Mining and Technology, Xuzhou 221008, P.R.China;

Research Center for Internet of Things, China University of Mining and Technology, Xuzhou 221008, P.R.China;

State Key Laboratory of Bioelectronics, Southeast University, Nanjing 210096, P.R. China;

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原文格式 PDF
正文语种 eng
中图分类工程材料一般性问题;
关键词
zinc oxide; thin film transistors; rf magnetron sputtering; lithography; etching;

机译：氧化锌薄膜晶体管；射频磁控溅射；光刻刻蚀;

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专利

1. Amorphous ZnO transparent thin-film transistors fabricated by fully lithographic and etching processes [J] . Hsing-Hung Hsieh, Chung-Chin Wu Applied Physics Letters . 2007,第1期

机译：通过完全光刻和蚀刻工艺制造的非晶ZnO透明薄膜晶体管
2. Experimental Study of Effective Carrier Mobility of Multi-Fin-Type Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistors with (111) Channel Surface Fabricated by Orientation-Dependent Wet Etching [J] . Yongxun Liu, Etsuro Sugimata, Kenichi Ishii, Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers . 2006,第4B期

机译：取向依赖性湿法刻蚀制备具有（111）沟道表面的多鳍片型双栅双金属氧化物半导体场效应晶体管的有效载流子实验研究
3. GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistor Fabricated with Novel Wet Etching [J] . Masahito Kodama, Masahiro Sugimoto, Eiko Hayashi, Applied physics express . 2008,第2期

机译：新型湿法刻蚀的GaN基沟槽栅金属氧化物半导体场效应晶体管
4. ZnO Field-effect Transistor Fabricated by RF Magnetron Suputtering and Lithographic/Wet Etching Processes [C] . Hongyu Ma, Enjie Ding, Zengliang Shi International Conference on Materials Engineering for Advanced Technologies . 2011

机译：由RF磁控磁控旋转和光刻/湿法蚀刻工艺制造的ZnO场效应晶体管
5. Nanostructured Surfaces Fabricated by Modi Ed Interference Lithographic Technique for Modulation of Interfacial Processes [D] . Mahmood, Russell. 2019

机译：Modi Ed干涉光刻技术制备的纳米结构表面用于界面过程的调节
6. Performance enhancement of multiple-gate ZnO metal-oxide-semiconductor field-effect transistors fabricated using self-aligned and laser interference photolithography techniques [O] . Hsin-Ying Lee, Hung-Lin Huang, Chun-Yen Tseng 2014

机译：使用自对准和激光干涉光刻技术制造的多栅极ZnO金属氧化物半导体场效应晶体管的性能增强
7. Performance enhancement of multiple-gate ZnO metal-oxide-semiconductor field-effect transistors fabricated using self-aligned and laser interference photolithography techniques [O] . Hsin-Ying Lee, Hung-Lin Huang, Chun-Yen Tseng 2014

机译：使用自对准和激光干涉光刻技术制造的多栅极ZnO金属氧化物半导体场效应晶体管的性能增强

ZnO Field-effect Transistor Fabricated by RF Magnetron Suputtering and Lithographic/Wet Etching Processes

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