Thermoelectric Properties of A Wide-Gap Chalcopyrite Compound AgInSe_2

著录项

• 来源
  《Materials for energy conversion and storage》|2012年|188-192|共5页
• 会议地点 Shenzhen(CN)
• 作者

  P.Z.Ying; H. Zhou; Y.L.Gao; Y.Y. Li; Y.P. Li; X.Liu; J. L. Cui;

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• 作者单位

  Materials Science and Engineering College, China University of Mining and Technology, Xuzhou 221116, P.R.China;

  Materials Science and Engineering College, China University of Mining and Technology, Xuzhou 221116, P.R.China;

  Materials Science and Engineering College, China University of Mining and Technology, Xuzhou 221116, P.R.China;

  Materials Science and Engineering College, Taiyaun University of Technology, Taiyuan 030024, P.R.China;

  Materials Science and Engineering College, Taiyaun University of Technology, Taiyuan 030024, P.R.China;

  Institute of Materials Engineering, Ningbo University of Technology, Ningbo 315016, P.R.China;

  Institute of Materials Engineering, Ningbo University of Technology, Ningbo 315016, P.R.China;

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• 会议组织
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  A wide-gap chalcopyrite compound AgInSe_2; thermoelectric properties; bandgap;

  机译：宽间隙黄铜矿化合物AgInSe_2;热电性能；带隙;