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TENSILE FRACTURE MECHANISM OF SILICON IMPREGNATED C/C COMPOSITE

机译:硅浸渍C / C复合材料的拉伸断裂机理

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摘要

Tensile fracture behavior of a silicon infiltrated cross-ply carbon-carbon (C/C-Si) laminate was examined at room temperature. Unlike C/C composites, C/C-Si has a non-linear stress-strain response with one third of the strength of a C/C composite before infiltration of Si. At 90% of the ultimate strength, the modulus decreased by 10% against initial value. Cross-sectional observation by optical microscopy and observation of the fracture surface by SEM were carried out to investigate the fracture mechanism. It was found that cracks in C/C-Si initiated from the tip of the process cracks generated after Si infiltration in 90° layer and propagated into the 0° layer cutting the 0° fibers. From the other process cracks, almost no new cracks were generated. From the in-situ observation during the loading-unloading test, the crack propagation rate from the tip of the process cracks increased with an increase in applied load. The length of new cracks correlated with the modulus degradation and the unrecoverable strain increase. This fact means that new cracks growing just from the process cracks caused by the Si infiltration process led to the low tensile strength and modulus degradation of the C/C-Si.
机译:在室温下检查了硅渗透的交叉层碳-碳(C / C-Si)层压材料的拉伸断裂行为。与C / C复合材料不同,C / C-Si具有非线性应力应变响应,其渗透力是Si渗透前C / C复合材料强度的三分之一。在极限强度的90%时,模量相对于初始值降低了10%。进行了光学显微镜的横截面观察和SEM的断裂表面观察,以研究断裂机理。已经发现,C / C-Si的裂纹是从工艺的尖端开始的,裂纹是在Si在90°层中渗透后产生的,并传播到切割0°纤维的0°层中。从其他过程裂纹来看,几乎没有新裂纹产生。从装卸试验过程中的现场观察,随着施加载荷的增加,从工艺裂纹尖端开始的裂纹扩展速率也随之增加。新裂纹的长度与模量下降和不可恢复的应变增加有关。这一事实意味着,仅由于由Si渗透过程引起的过程裂纹而产生的新裂纹,导致C / C-Si的抗拉强度和模量降低。

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  • 来源
  • 会议地点 Daytona Beach FL(US);Daytona Beach FL(US);Daytona Beach FL(US)
  • 作者

    Akio Ohtani; Ken Goto;

  • 作者单位

    Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency 3-1-1 Yoshinodai, Sagamihara, Kanagawa, Japan;

    Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency 3-1-1 Yoshinodai, Sagamihara, Kanagawa, Japan;

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