A new process for liquid phase deposition (LPD) of silicon oxide is developed successfully. Both drawbacks in the conventational LPD process: long solution preparation time and low deposition rate, are greatly improved in the present process. This improved LPD process is applied to planarize metal gate of inverted staggered amorphous silicon thin film transistor (TFT). It is found that the device performance is improved by this novel gate planarization process. Besides, the usual leakage problem around the sharp comer of the gate electrode is eliminated.
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