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Electroreflectance characterization of three InGaAs quantum wells placed in a GaAs/GaAlAs resonant cavity: contactless and contact modes

机译：放置在GaAs / GaAlAs谐振腔中的三个InGaAs量子阱的电反射特性：非接触和接触模式

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Electroreflectance (contactless and with contacts) has been used to characterize an InGaAs vertical-cavity surface-emitting laser at 300 K. The 1020 nm lasing spectrum correlates very well with the energy of the lowest lying electroreflectance feature.

机译：电反射（非接触式和接触式）已被用来表征300 K时InGaAs垂直腔表面发射激光器。1020nm激光光谱与最低电反射特征的能量非常相关。

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《》|1994年|P.218-219|共2页
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Moneger; S.; Pollak; F.H.;
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中图分类无线电电子学、电信技术;
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2. Probing the indium clustering in InGaAs/GaAs quantum wells by room temperature contactless electroreflectance and photoluminescence spectroscopy [J] . M. Motyka, G. Sek, R. Kudrawiec, Journal of Applied Physics . 2007,第11期

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3. Contactless Electroreflectance and Photoluminescence Study of the Sb Surfactant Effects on InGaAsN Multiple Quantum Wells [J] . H. P. Hsu, J. K. Huang, Y. S. Huang, Chinese Journal of Physics . 2013,第5期

机译：锑表面活性剂对InGaAsN多量子阱的非接触电反射和光致发光研究
4. Electroreflectance characterization of three InGaAs quantum wells placed in a GaAs/GaAlAs resonant cavity: contactless and contact modes [C] . Moneger S., Pollak F.H., Institute of Electric and Electronic Engineer Lasers and Electro-Optics Society Annual Meeting . 1994

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5. Coherent Spectroscopy of InGaAs Quantum Dots =Koh?rente Spektroskopie an InGaAs Quantenpunkten [D] . Strau?, Stefan Maximilian. 2018

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6. Contactless Measurements of Carrier Concentrations in InGaAs Layers for Utilizing in InP-Based Quantum Cascade Lasers by Employing Optical Spectroscopy [O] . Marcin Kurka, Michał Rygała, Grzegorz Sęk, 2020

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8. Characterization of Undoped Pseudomorphic InGaAs/GaAs Quantum Wells by ElectronBeam Electroreflectance (EBER) and Photoluminescence [R] . Herman, M. H., Dodabalapur, A., Ward, I. D., 1990

机译：用电子束电反射（EBER）和光致发光表征未掺杂的假晶InGaas / Gaas量子阱

Electroreflectance characterization of three InGaAs quantum wells placed in a GaAs/GaAlAs resonant cavity: contactless and contact modes

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