In this work, we report an alternative method of obtaining highly non-stoichiometric GaAs layers by implanting semi-insulating GaAs with high doses of As or Ga ions. The implanted samples were then annealed in the temperature range of 300-800/spl deg/C. At the temperatures of 500-600/spl deg/C, properties similar to that of low temperature LT-GaAs can be achieved. Beside providing an alternative material comparable to LT-GaAs, ion-implantation has advantages over epitaxial technique in terms of device fabrication. Ion implantation allows precise control over the incorporation of implanted ions on selected areas of the wafer. Furthermore, ion implantation provides a simple and cost effective way of device fabrication as it is compatible to the current planar fabrication technology.
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