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A novel simple shallow trench isolation (SSTI) technology using high selective CeO/sub 2/ slurry and liner SiN as a CMP stopper

机译:一种新颖的简单浅沟槽隔离(SSTI)技术,使用高选择性CeO / sub 2 /浆料和衬里SiN作为CMP塞

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摘要

A novel simple shallow trench isolation technology, SSTI, has been developed. SSTI consists of direct trench etching masked only with the photoresist, trench oxidation, liner SiN deposition, CVD oxide trench fill, densification, and high selectivity CMP. CMP stops at the liner SiN with a residual SiN thickness range of less than 2 nm and without micro-scratching. High selectivity CMP eliminates the field recess variation which is one of the drawbacks of conventional STI. SSTI is a promising candidate for future isolation technology.
机译:已经开发出一种新颖的简单浅沟隔离技术SSTI。 SSTI仅由光致抗蚀剂,沟槽氧化,衬垫SIN沉积,CVD氧化物沟槽填充,致密化和高选择性CMP掩蔽的直接沟槽蚀刻。 CMP在衬垫的衬垫中停止,残留的SIN厚度范围小于2nm,没有微刮擦。高选择性CMP消除了作为传统STI的缺点之一的场凹陷变化。 SSTI是未来隔离技术的有希望的候选者。

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