• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议> >Comparison of /spl kappa/>3 silicon oxide-based dielectric pre-copper metallization preclean processes using black diamond
【24h】

Comparison of /spl kappa/>3 silicon oxide-based dielectric pre-copper metallization preclean processes using black diamond

机译：使用黑金刚石的/ spl kappa /> / 3氧化硅基电介质预铜金属化预清洗工艺的比较

获取原文
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Low dielectric constant silicon oxide-based films which incorporate a high density of nanometersized pores are receiving widespread attention because of a combination of compelling attributes. Plasma processes which are used to clean copper pads at the bottom of vias prior to copper diffusion barrier film deposition are examined with respect to their effect on a PECVD low density silicon-oxide-based low-/spl kappa/ film. Reactive preclean using 5%H/sub 2//95%He is best for these low-/spl kappa/ silicon oxide-based films, for both plasma overashed films (resulting from photoresist removal) and unashed films, compared to sputter precleaning and reactive precleaning using 10%H/sub 2//90%He. Lower reactive preclean coil power and shorter preclean times result in the lowest increase in dielectric constant.
机译：由于具有引人注目的特性，结合了高密度纳米孔的低介电常数氧化硅基薄膜受到了广泛的关注。就其对基于PECVD低密度氧化硅的低k / spl kappa /膜的影响，检查了用于在铜扩散阻挡膜沉积之前用于清洁通孔底部的铜焊盘的等离子工艺。使用5％H / sub 2 // 95％He的反应性预清洗最适合于这些低/ splκ/氧化硅基薄膜，与溅射预清洗和使用10％H / sub 2 // 90％He进行反应性预清洁。较低的无功预清洁线圈功率和较短的预清洁时间将导致介电常数的增加最小。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号