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Operational simulation of an X-ray lithography cell: comparison of 200 mm and 300 mm wafers

机译:X射线光刻单元的操作模拟:200 mm和300 mm晶圆的比较

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We review progress on a project to evaluate prospective operations in a semiconductor wafer fab that employs next generation, proximity X-ray lithography to pattern the critical dimensions of computer chips. A simulation model is developed that captures the processing of wafers through an X-ray lithography cell using a synchrotron as the source of exposure radiation. The model incorporates the best current information on unit-cell design and processing times and implements a range of events that interrupt the flow of wafers processing on the cell. Performance measures estimated from the simulation include the weekly throughput for the cell and the frequency of SEMI E-10 equipment states for the corresponding exposure tool. Simulation experiments are conducted to compare the performance of a cell fabricating 200 mm wafers with that of a cell fabricating 300 mm wafers, for each of three different chip sizes. Results illustrate the anticipated dependence of average wafer throughput on wafer size and assumptions regarding the number of chips per wafer, with a maximum of approximately 3400 wafers/week for 200 mm wafers with 25/spl times/25 mm field size. Ignoring wafer-sort losses, however, a maximum throughput of approximately 410,000 chips/week is realized for 300 mm wafers with 11/spl times/22 mm fields. Remarkably, the distribution of equipment states remains relatively unchanged across simulation experiments.
机译:我们回顾了一个项目的进展,该项目评估了采用下一代近距离X射线光刻技术来图案化计算机芯片关键尺寸的半导体晶圆厂的预期运营。开发了一个仿真模型,该模型使用同步加速器作为曝光辐射源,通过X射线光刻单元捕获晶片的处理过程。该模型结合了有关单元电池设计和处理时间的最佳最新信息,并实现了一系列事件,这些事件中断了电池在单元电池上的处理流程。通过仿真估算的性能指标包括电池的每周生产量以及相应曝光工具的SEMI E-10设备状态的频率。针对三种不同的芯片尺寸,分别进行了仿真实验,以比较制造200毫米晶片的电池与制造300毫米晶片的电池的性能。结果说明了平均晶圆生产量对晶圆尺寸的预期依赖性以及关于每个晶圆的芯片数量的假设,对于具有25 / spl次/ 25 mm场尺寸的200 mm晶圆,最大每周产能约为3400晶圆。然而,忽略晶片分类损失,对于具有11 / spl次/ 22mm场的300mm晶片,可实现约410,000个芯片/周的最大生产量。值得注意的是,在整个模拟实验中,设备状态的分布保持相对不变。

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