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Application of Auger electron spectroscopy (AES), TEM electron energy loss spectrum (EELS) in failure analysis on poly grooves issue in wafer fabrication

机译:俄歇电子能谱(AES),TEM电子能量损失谱(EELS)在晶片制造中多槽问题的失效分析中的应用

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In this paper, a case study on the failure analysis and yield enhancement on poly grooves/divots in wafer fabrication was investigated and studied. Several failure analysis techniques and tools such as SEM, Auger electron spectroscopy (AES) and transmission electron microscopy electron energy loss spectrum (TEM EELS) were used in the course of the failure analysis to understand the root cause/mechanism relating to poly groove issues. The poly grooves occurred on the interface of the P+/N+ poly was due to missing oxide as a result of the resist not removed and caused chemical attack in the subsequent spacer etch.
机译:本文以晶圆制造中多槽/沟槽的失效分析和良率提高为例,进行了研究。在故障分析过程中,使用了几种故障分析技术和工具,例如SEM,俄歇电子能谱(AES)和透射电子显微镜电子能量损失谱(TEM EELS),以了解与多沟槽问题相关的根本原因/机制。在P + / N +多晶硅界面上出现的多晶硅沟槽是由于未去除抗蚀剂而丢失了氧化物,并在随后的间隔层蚀刻中引起了化学侵蚀。

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