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Microwave induced interference effects in semiconductor devices under short pulse illumination

机译：微波在短脉冲照明下对半导体器件的干扰效应

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摘要

Microwave interference effects in semiconductor devices under short pulse illumination are considered. The dependence of microwave-induced interference signal on microwave pulse duration and radiation frequency is analyzed.

机译：考虑了短脉冲照射下的半导体器件中的微波干扰效应。分析了微波诱导干扰信号对微波脉冲持续时间和辐射频率的依赖性。

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《》|2005年|P.685-686|共2页
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Zaleshin; A.V.; Klyuchnik; A.V.;
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中图分类工业技术;
关键词
radiofrequency interference; semiconductor devices; microwave induced interference; microwave pulse duration; radiation frequency; semiconductor devices; short pulse illumination;

机译：射频干扰;半导体器件;微波感应干扰;微波脉冲持续时间;辐射频率;半导体器件;短脉冲照明;

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4. Microwave induced interference effects in semiconductor devices under short pulse illumination [C] . Zaleshin A.V., Klyuchnik A.V. International Crimean Conference on Microwave Telecommunication Technology . 2005

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Microwave induced interference effects in semiconductor devices under short pulse illumination

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