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Visualization Using the Scanning Nonlinear Dielectric Microscopy of Electrons and Holes Localized in the Thin Gate Film of Metal-Oxide-Nitride-Oxide-Semiconductor Type Flash Memory

机译：使用金属-氧化物-氮化物-氧化物-半导体型闪存栅薄膜中电子和空穴的扫描非线性电介质显微镜进行可视化

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By applying Scanning Nonlinear Dielectric Microscopy (SNDM), we identified the position of electrons/holes existing in the gate SiO2-Si3N4-SiO2 (ONO) film of the Metal-Oxide-Nitride-Oxide-Semiconductor (MONOS) type flash memory. The electrons were detected in the Si3N4 part of the ONO film. The holes, on the other hand, were found in the Si3N4 film as well as in the bottom SiO2 film. Additionally, we succeeded in detecting the electrons existed in the poly-Si layer of the floating gate of flash memory.

机译：通过应用扫描非线性介电显微镜（SNDM），我们确定了金属氧化物-氮化物-氮化物-氧化物半导体（MONOS）型闪存的栅极SiO2-Si3N4-SiO2（ONO）膜中存在的电子/空穴的位置。在ONO膜的Si 3 N 4部分中检测到电子。另一方面，在Si3N4膜和底部SiO2膜中都发现了孔。此外，我们成功地检测了闪存浮动栅的多晶硅层中存在的电子。

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《》|2006年|4-11|共8页
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Honda; Koichiro; Cho; Yasuo;
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1. Visualization of electrons and holes localized in the thin gate film of metal-oxide-nitride-oxide-semiconductor type Flash memory by scanning nonlinear dielectric microscopy [J] . Koichiro Honda, Sunao Hashimoto, Yasuo Cho Nanotechnology . 2005,第3期

机译：通过扫描非线性介电显微镜可视化位于金属氧化物-氮化物-氧化物-半导体型闪存中的薄栅膜中的电子和空穴
2. Visualization of Electrons Localized in Metal-Oxide-Nitride-Oxide-Semiconductor Flash Memory Thin Gate Films by Detecting High-Order Nonlinear Permittivity Using Scanning Nonlinear Dielectric Microscopy [J] . Koichiro Honda, Yasuo Cho . 2012,第3期

机译：通过使用扫描非线性介电显微镜检测高阶非线性介电常数来可视化位于金属氧化物-氮化物-氧化物-半导体-闪存薄膜中的电子
3. Visualization of electrons and holes localized in gate thin film of metal SiO_2-Si_3N_4-SiO_2 semiconductor-type flash memory using scanning nonlinear dielectric microscopy after writing-erasing cycling [J] . Koichiro Honda, Sunao Hashimoto and Yasuo Cho Applied Physics Letters . 2005,第6期

机译：写入-擦除循环后使用扫描非线性介电显微镜对金属SiO_2-Si_3N_4-SiO_2半导体型闪存的栅极薄膜中的电子和空穴进行可视化
4. Visualization Using the Scanning Nonlinear Dielectric Microscopy of Electrons and Holes Localized in the Thin Gate Film of Metal-Oxide-Nitride-Oxide-Semiconductor Type Flash Memory [C] . Honda Koichiro, Cho Yasuo Annual Non-Volatile Memory Technology Symposium . 2006

机译：使用扫描非线性介电显微镜的电子和孔的孔孔透镜型在金属氧化物 - 氮化物 - 氧化物 - 氧化物半导体型闪存中的薄栅极膜中
5. Visualizing Structure / Property Relationships in Organic Semiconductor Thin Films by Scanning Probe Microscopy. [D] . Ellison, David J. 2011

机译：通过扫描探针显微镜观察有机半导体薄膜中的结构/性质关系。
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机译：scan化date薄膜作为通过电子束蒸发制备的替代栅介质

Visualization Using the Scanning Nonlinear Dielectric Microscopy of Electrons and Holes Localized in the Thin Gate Film of Metal-Oxide-Nitride-Oxide-Semiconductor Type Flash Memory

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