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A comparative study of photoenhanced wet chemical etching and reactive ion etching of GaN epilayers grown on various substrates

机译：在各种衬底上生长的GaN外延层的光增强湿化学蚀刻和反应离子蚀刻的比较研究

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摘要

We have explored wet and dry etching of GaN epilayers using photoenhanced wet etching and reactive ion etching. Samples investigated were commercially grown by hydride vapour phase epitaxy (HVPE) on SiC and sapphire substrates. Aqueous KOH was used for an electrolyte and UV illumination from a xenon lamp for photoenhanced wet etching. For reactive ion etching, we used a gas mixture of CCl/sub 2/F/sub 2/ and argon. Typical etch rates measured were 40 nm/min and 20 nm/min for wet and dry etching respectively. We found that post wet-etched surfaces were very rough compared with dry etched surfaces. Both techniques were found to reveal the defects in the epilayers and reactive ion etching revealed etch pits in the GaN/Al/sub 2/O/sub 3/ samples. Etch pit density was found to increase slightly as etch time progressed and after 30 minutes, the density was 1/spl times/10/sup 8//cm/sup 2/. After 90 minutes etching, the substrate was revealed and no etch pits were observed.
机译：我们已经探索了使用光增强湿法刻蚀和反应离子刻蚀对GaN外延层进行湿法和干法刻蚀。通过氢化物气相外延（HVPE）在SiC和蓝宝石衬底上商业生长被调查的样品。使用KOH水溶液作为电解质，并使用氙气灯的UV照射以进行光增强湿蚀刻。对于反应性离子蚀刻，我们使用了CCl / sub 2 / F / sub 2 /和氩气的混合气体。对于湿法蚀刻和干法蚀刻，所测量的典型蚀刻速率分别为40 nm / min和20 nm / min。我们发现，与干法蚀刻的表面相比，湿法蚀刻后的表面非常粗糙。发现这两种技术都可以揭示外延层中的缺陷，而反应离子刻蚀可以揭示GaN / Al / sub 2 / O / sub 3 /样品中的刻蚀坑。发现蚀刻坑的密度随着蚀刻时间的进行而略微增加，并且在30分钟后，密度为1 / spl×/ 10 / sup 8 // cm / sup 2 /。蚀刻90分钟后，露出基板，没有观察到蚀刻坑。

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