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Helium pre-implantation and post-implantation effects on hydrogen isotope retention in SiC

机译：氦注入前和注入后对SiC中氢同位素保留的影响

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Helium pre-implantation and post-implantation effects on hydrogen isotope behavior in SiC have been studied by means of X-ray photoelectron spectroscopy (XPS) and thermal desorption spectroscopy (TDS). It was found that the energetic D2+ is trapped by SiC with forming Si-D and C-D bonds. By He+ pre-implantation, some D trapping site, namely carbon vacancies, would be largely influenced. He would be retained in SiC with forming He blister or remained in the interstitial site. Energetic D2+ and He+ would also interact with the SiC structure and the damaged structures would be introduced by He+ implantation. It was also found that D retention was largely decreased by He+ implantation, especially He+ post-implantation, indicating the direct interaction between energetic helium and trapped deuterium would be important. The XPS analyses indicated that the free carbon was formed in SiC by ion implantation. Most of free carbon would be recovered by the desorption of D by heating. However, some of C would be migrated toward the surface and aggregated on the surface of SiC. This would cause high tritium retention in fusion reactor.
机译：借助X射线光电子能谱（XPS）和热脱附能谱（TDS）研究了氦的注入前和注入后对SiC中氢同位素行为的影响。发现高能的D2 +被SiC捕获并形成Si-D和C-D键。通过He +的预植入，将大大影响D的某些俘获位点，即碳的空位。他将因形成He气泡而被保留在SiC中或保留在间隙位置。高能的D2 +和He +也将与SiC结构相互作用，受损的结构将通过He +注入而引入。还发现，通过He +注入，尤其是He +注入后，D保留量大大降低，这表明高能氦气与捕获的氘之间的直接相互作用将很重要。 XPS分析表明，通过离子注入在SiC中形成了游离碳。大部分游离碳将通过加热使D解吸而回收。但是，某些碳会向表面迁移并聚集在SiC的表面上。这将导致fusion保留在聚变反应堆中。

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