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An ultra-small isolation area for 600V class reverse blocking IGBT with deep trench isolation process (TI-RB-IGBT)

机译：采用深沟槽隔离工艺的600V级反向阻断IGBT的超小隔离区（TI-RB-IGBT）

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We developed a 600 V class trench isolation RB-IGBT (TI-RB-IGBT), whose termination area is extremely small in comparison with other isolation techniques, such as diffusion isolation or silicon mesa etching. The TI area is not only very small but also almost identical for all the blocking voltage classes. Our fabricated 100 A class TI-RB-IGBT, with one micron rule planar gate structure, has more than 600 V blocking capability for both directions, and its trade-off relationship between the forward voltage drop Vce(sat) and the turn-off energy loss Eoff is slightly better than our previous punch through (PT) type third generation planar gated IGBT, even though it has an n-body and the backside collector structure is of the NPT type.

机译：我们开发了600 V级沟槽隔离RB-IGBT（TI-RB-IGBT），与其他隔离技术（例如扩散隔离或硅台面蚀刻）相比，其终止面积非常小。对于所有阻断电压类别，TI面积不仅很小，而且几乎相同。我们制造的100 A级TI-RB-IGBT具有一个微米规则的平面栅极结构，在两个方向上均具有600 V以上的阻断能力，并且其正向压降Vce（sat）与关断之间的权衡关系能量损失Eoff尽管具有n型主体且背面集电极结构为NPT类型，但比我们先前的穿通（PT）型第三代平面栅IGBT稍好。

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《》|2004年|p.129-132|共4页
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Tokuda; N.; Kaneda; M.; Minato; T.;
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中图分类无线电电子学、电信技术;
关键词
insulated gate bipolar transistors; power bipolar transistors; isolation technology; power field effect transistors; ultra-small isolation area; reverse blocking IGBT; deep trench isolation process; TI-RB-IGBT termination area; planar gate structure; bidirectional blocking capability; forward voltage drop; turn-off energy loss; NPT type backside collector structure; 600 V; 100 A;

机译：绝缘栅双极晶体管;功率双极晶体管;隔离技术;功率场效应晶体管;超小隔离区;反向阻断IGBT;深沟槽隔离工艺; TI-RB-IGBT终端区;平面栅极结构;双向阻断能力;正向电压下降;关断能量损耗; NPT型背面集电极结构; 600 V; 100 A;

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3. Shallow trench isolation stress modification by optimal shallow trench isolation process for sub-65-nm low power complementary metal oxide semiconductor technology [J] . Chan-Yuan Hu, Jone F. Chen, Shih-Chih Chen, Journal of Vacuum Science & Technology . 2010,第2期

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4. An ultra-small isolation area for 600V class reverse blocking IGBT with deep trench isolation process (TI-RB-IGBT) [C] . Tokuda N., Kaneda M., Minato T. International Symposium on Power Semiconductor Devices and ICs . 2004

机译：具有深度沟槽隔离过程的600V类反向阻断IGBT的超小隔离区（Ti-RB-IGBT）
5. Shallow-trench-isolation bounded single-photon avalanche diodes in commercial deep submicron CMOS technologies. [D] . Finkelstein, Hod. 2007

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An ultra-small isolation area for 600V class reverse blocking IGBT with deep trench isolation process (TI-RB-IGBT)

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