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Quantum transport simulation of ultra-small V-groove junctionless transistors

机译：超小型V槽无结晶体管的量子输运模拟

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We have performed non-equilibrium Green's function simulation of n-type ultra-small V-groove junctionless field-effect transistors (JL-FETs) on a silicon-on-insulator substrate under the ballistic condition. We find that the ON-current is determined mainly by the gap thickness and the subthreshold swing becomes the minimum at a gap-thickness of about 0.6 nm for the gate-length of 7.2 nm.

机译：我们已经在弹道条件下在绝缘体上硅衬底上对n型超小型V形沟槽无结场效应晶体管（JL-FET）进行了非平衡Green函数仿真。我们发现，导通电流主要由间隙厚度决定，并且对于7.2 nm的栅极长度，在约0.6 nm的间隙厚度下，亚阈值摆幅变得最小。

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来源
《》|2014年|1-2|共2页
会议地点 Kyoto(JP)
作者
Yamana Tatsuya; Mori Nobuya;
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作者单位

Graduate School of Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan;

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原文格式 PDF
正文语种 eng
中图分类
关键词
Ballistic transport; Educational institutions; Green#039; s function methods; Logic gates; Silicon-on-insulator; Substrates; Transistors; junctionless transistor; non-equilibrium Green#039; s function; silicon; simulation;

机译：弹道运输；教育机构;格林函数方法；逻辑门绝缘体上硅基材；晶体管；无结晶体管非平衡格林函数；硅;模拟;;

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1. Model Order Reduction for Multiband Quantum Transport Simulations and its Application to p-Type Junctionless Transistors [J] . Huang J.Z., Chew W.C., Peng J., IEEE Transactions on Electron Devices . 2013,第7期

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2. Effects of Discrete Quantum Levels on Electron Transport in Silicon Single-Electron Transistors with an Ultra-Small Quantum Dot [J] . Masumi Saitoh, Toshiro Hiramoto IEICE Transactions on Electronics . 2001,第8期

机译：离散量子能级对具有超小量子点的硅单电子晶体管中电子输运的影响
3. Junctionless Silicon and In_0.53Ga_0.47As Transistors—Part I: Nominal Device Evaluation With Quantum Simulations [J] . Pan Andrew, Leung Greg, Chui Chi On Electron Devices, IEEE Transactions on . 2015,第10期

机译：无结硅和In _{0.53 Ga _{0.47 As晶体管—第一部分：标称器件评估与量子仿真}}
4. Quantum transport simulation of ultra-small V-groove junctionless transistors [C] . Yamana Tatsuya, Mori Nobuya Institute of Electrical and Electronics Engineers International Meeting for Future of Electron Devices, Kansai . 2014

机译：超小型V-沟槽连接晶体管的量子传输模拟
5. Three dimensional quantum mechanical simulations of semiconductor nanowire transistors. [D] . Gilbert, Matthew J. 2005

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6. Temperature dependence of electronic behaviors in quantum dimension junctionless thin-film transistor [O] . Ya-Chi Cheng, Hung-Bin Chen, Ming-Hung Han, 2014

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7. Model order reduction for multiband quantum transport simulations and its application to p-type junctionless transistors [O] . Huang J, Chew WC, Peng J, 2013

机译：多频带量子传输模拟的模型阶数减少及其在p型无结晶体管中的应用

Quantum transport simulation of ultra-small V-groove junctionless transistors

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