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Silicon solar cells with nano-crystalline silicon down shifter:experiment and modeling

机译：带有纳米晶硅下移器的硅太阳能电池：实验与建模

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摘要

Materials used as luminescent down shifters (LDS) have to absorb light effectively in the spectral area where solar cells have poor internal quantum efficiency. At the same time these materials have to emit most of the absorbed spectral powers at lower energies where the internal quantum efficiency of the solar cell is close to the maximum. The effects of silicon nanocrystals prepared by thermal treatment of a silicon-rich-oxide (SRO) layer on the efficiency of c-Si cells are investigated in this paper. The SRO layer is characterized by a high photoluminescence peak at around 800 nm. Influence of the active layer on light transmission and on the modification of the optical spectra due to photoluminescence generation has been determined with the help of optical measurements and transfer matrix simulations. The solar cell efficiency for cells with and without down-shifting layer were measured under illumination with AM1.5G solar spectrum and compared with the simulations. Finally, we model the behavior of cells with and without LDS layer showing that a cell with LDS suffers less from bad surface passivation.
机译：用作发光下移器（LDS）的材料必须在太阳能电池内部量子效率较差的光谱区域有效吸收光。同时，这些材料必须以较低的能量发射大部分吸收的光谱功率，而太阳能电池的内部量子效率接近最大值。本文研究了通过热处理富硅氧化物（SRO）层制备的硅纳米晶体对c-Si电池效率的影响。 SRO层的特征在于在约800nm处的高光致发光峰。借助于光学测量和转移矩阵模拟，已经确定了活性层对光透射的影响以及对由于光致发光产生的光谱的改变的影响。在具有AM1.5G太阳光谱的照明下测量了具有和不具有下移层的电池的太阳能电池效率，并将其与仿真进行了比较。最后，我们对具有和不具有LDS层的电池的行为进行建模，显示具有LDS的电池受不良表面钝化的影响较小。

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  • 来源
    《》|2010年|p.77720B.1- 77720B.7|共7页
  • 会议地点 San Diego CA(US)
  • 作者

    Yoann Jestin; Georg Pucker; Mher Ghulinyan; Lorenza Ferrario; Pierluigi Bellutti; Antonio Picciotto; Amos Collini; Alessandro Marconi; Aleksei Anopchenko; Zhizhong Yuan; Lorenzo Pavesi;

  • 作者单位

    a Advanced Photonics and Photovoltaics Group, Bruno Kessler Foundation, Via Sommarive 18,38121 Povo (Trento) Italy;

    a Advanced Photonics and Photovoltaics Group, Bruno Kessler Foundation, Via Sommarive 18,38121 Povo (Trento) Italy;

    a Advanced Photonics and Photovoltaics Group, Bruno Kessler Foundation, Via Sommarive 18,38121 Povo (Trento) Italy;

    Microtechnologies Laboratory, Bruno Kessler Foundation, Via Sommarive 18, 38121 Povo(Trento) Italy;

    Microtechnologies Laboratory, Bruno Kessler Foundation, Via Sommarive 18, 38121 Povo(Trento) Italy;

    Microtechnologies Laboratory, Bruno Kessler Foundation, Via Sommarive 18, 38121 Povo(Trento) Italy;

    Microtechnologies Laboratory, Bruno Kessler Foundation, Via Sommarive 18, 38121 Povo(Trento) Italy;

    Nanoscience Laboratory, Department of Physics, University of Trento, Via Sommarive 14, 38121 Povo (Trento) Italy;

    Nanoscience Laboratory, Department of Physics, University of Trento, Via Sommarive 14, 38121 Povo (Trento) Italy;

    Nanoscience Laboratory, Department of Physics, University of Trento, Via Sommarive 14, 38121 Povo (Trento) Italy;

    Nanoscience Laboratory, Department of Physics, University of Trento, Via Sommarive 14, 38121 Povo (Trento) Italy;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 光电池;
  • 关键词

    Silicon solar cells; PECVD; silicon nanocrystals; silicon rich oxide; spectral down shifting; photoluminescence; power conversion efficiency; modeling;

    机译：硅太阳能电池； PECVD;硅纳米晶体；富硅氧化物频谱下移光致发光功率转换效率；造型;

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