DC characteristic analysis of AlGaN/GaN HEMT and MOSHEMT

机译：Algan / GaN Hemt和MoShemt的DC特征分析

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In this paper we have improved the DC characteristics of conventionally used AlGaN/GaN High electron mobility transistor (HEMT) by inserting an oxide layer (HfO_2) in between the metal gate and the AlGaN barrier layer. The analysis of DC characteristics of newly simulated AlGaN/GaN metal oxide semiconductor High electron mobility transistor (MOSHEMT) device shows enhanced performance in comparison to the AlGaN/GaN HEMT device. Both the devices are simulated by using Synopsys Technology Computer Aided Design (TCAD). Various DC parameters such as I_D-V_D, I_D-V_G, I_(ON)/I_(OFF) ratio, leakage current and sheet charge density for both the devices are extracted and analyzed. After comparison of important DC parameters, MOSHEMT shows enhanced performance over HEMT.

机译：在本文中，我们通过在金属栅极和AlGAN阻挡层之间插入氧化物层（HFO_2），改善了传统使用的AlGaN / GaN高电子迁移率晶体管（HEMT）的DC特性。新模拟AlGaN / GaN金属氧化物半导体高电子迁移率晶体管（MOSHEMT）装置的DC特性分析显示了与AlGaN / GaN HEMT装置相比的增强性能。通过使用Synopsys Technology计算机辅助设计（TCAD）模拟这两种设备。提取和分析了各种DC参数，例如I_D-V_D，I_D-V_G，I_（ON）/ I_（OFF）比率，漏电流和磁盘充电密度，并分析。在比较重要的DC参数之后，MOSHEMT显示出在HEMT上的增强性能。

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《International Conference on Signal Processing, Communication, Power and Embedded System》|2016年|1423-2124p|共4页
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Suraj Gupta; S. N. Mishra; K. Jena;
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中图分类 TN91-53;
关键词
2DEG; Gallium Nitride (GaN); Aluminium Gallium Nitride (AlGaN); MOSHEMT; HMET; TCAD;

机译：2EG;氮化镓（GaN）;氮化铝镓（AlGaN）;MOSHEMT;HMET;TCAD;

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1. Effect of X-ray irradiation on threshold voltage of AlGaN/GaN HEMTs with p-GaN and MIS Gates [J] . Yongle Qi, Denggui Wang, Jianjun Zhou, 纳米技术与精密工程（英文） . 2020,第004期
2. Modeling and comparative analysis of DC characteristics of AlGaN/GaN HEMT and MOSHEMT devices [J] . Jena Kanjalochan, Swain Raghunandan, Lenka Trupti Ranjan International journal of numerical modelling . 2016,第1期

机译：AlGaN / GaN Hemt和MoShemt设备DC特性的建模与比较分析
3. Modeling and simulation of DC and microwave characteristics of AlInN(AlGaN)/AlN/GaN MOSHEMTs with different gate lengths [J] . Amarnath G., Panda D. K., Lenka T. R. International journal of numerical modelling . 2019,第1期

机译：不同栅极长度的AlInN（AlGaN）/ AlN / GaN MOSHEMT的直流和微波特性的建模和仿真
4. Modeling and simulation of DC and microwave characteristics of AlInN(AlGaN)/AlN/GaN MOSHEMTs with different gate lengths [J] . Amarnath G., Panda D. K., Lenka T. R. International journal of numerical modelling . 2019,第1期

机译：不同栅极长度的Alinn（Algan）/ Aln / GaN MoShemts DC和微波特性的建模与仿真
5. DC characteristic analysis of AlGaN/GaN HEMT and MOSHEMT [C] . Suraj Gupta, S. N. Mishra, K. Jena International Conference on Signal Processing, Communication, Power and Embedded System . 2016

机译：AlGaN / GaN HEMT和MOSHEMT的直流特性分析
6. Analysis of Heat Dissipation in AlGaN/GaN HEMT with GaN Micropits at GaN-SiC Interface [D] . Suri, Suraj. 2016

机译：GaN-SiC界面处具有GaN微坑的AlGaN / GaN HEMT中的散热分析
7. High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers [O] . Ya-Ju Lee, Yung-Chi Yao, Chun-Ying Huang, 2014

机译：使用AlGaN / GaN / AlGaN量子阱电子阻挡层的AlGaN / GaN HEMT中的高击穿电压
8. CONSISTENT MODELING OF DC AND AC CHARACTERISTICS OF GaN/AlGaN MICROWAVE POWER HEMTS [O] . José Pedro, João Gomes, Luís Nunes 2020

机译：GaN / AlGaN微波功率HEMTS的直流和AC特性的一致建模

DC characteristic analysis of AlGaN/GaN HEMT and MOSHEMT

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