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首页> 外文会议>International Conference on Signal Processing, Communication, Power and Embedded System >Analytical Modeling of Low Cost Single and Dual Gate Organic Transistor and their Parameters Extraction
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Analytical Modeling of Low Cost Single and Dual Gate Organic Transistor and their Parameters Extraction

机译：低成本单栅极有机晶体管的分析建模及其参数提取

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摘要

This research paper analyzes the electrical behavior of single gate (SG) and dual gate (DG) organic thin film transistors (OTFTs). To better understand the device physics and conduction mechanism, an analytical model for drain current is derived incorporating the empirical parameters. The effect of two gate insulator capacitances along with depletion capacitance of the organic semiconductor active layer is incorporated. To validate the models, the OTFT in both structures is simulated and thus the analytical model parameters are compared with the simulation results. DG-OTFT exhibits improved performance by means of current, mobility, threshold voltage and transconductance than that of SG-OTFT. Consequently, a substantial improvement of 67%, 50%, 19% and 54%, respectively is observed. Realization of such improved performance device structure using organic materials demonstrates the possibility of producing low cost digital and analog circuits on the bendable substrates and thus establishes a stepping stone towards low cost flexible organic electronics.
机译：本研究论文分析了单门（SG）和双栅极（DG）有机薄膜晶体管（OTFT）的电动特性。为了更好地理解设备物理和传导机制，推导出具有经验参数的漏极电流的分析模型。掺入了两个栅极绝缘体电容以及有机半导体有源层的耗尽电容的影响。为了验证模型，模拟了两个结构中的OTFT，因此将分析模型参数与模拟结果进行了比较。 DG-OTFT通过比SG-OTFT的电流，移动性，阈值电压和跨导具有改进的性能。因此，分别观察到67％，50％，19％和54％的显着提高。使用有机材料的这种改进的性能装置结构实现了在可弯曲基板上产生低成本数字和模拟电路的可能性，从而建立朝向低成本柔性有机电子设备的踩踏石。

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