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A Physics Based Resistance Model of the Overlap Regions in LDD-MOSFETs

机译：基于物理的LDD-MOSFET重叠区电阻模型

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摘要

A new resistance model for lightly doped source/drain regions featuring a nonlinear gate voltage dependence has been implemented in the Bsim3 v3 model. This is achieved by separating the LDS(D) resistance into a voltage dependent accumulation and a spreading part.

机译：Bsim3 v3模型中已实现了具有非线性栅极电压依赖性的轻掺杂源极/漏极区域的新电阻模型。这是通过将LDS（D）电阻分为电压相关的累加和扩展部分来实现的。

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来源
《》|1998年|267-270|共4页
会议地点 Leuven(BE);Leuven(BE)
作者
E. Gondro; F. Schuler; P. Klein;
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作者单位

Institute of Electronics, University of Bundeswehr Werner-Heisenberg-Weg 39, D-85577 Neubiberg, Germany;

Institute of Electronics, University of Bundeswehr Werner-Heisenberg-Weg 39, D-85577 Neubiberg, Germany;

Siemens AG Balanstrasse 73, D-81541 Munich, Germany;

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原文格式 PDF
正文语种 eng
中图分类半导体器件制造工艺及设备;
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8. A Physics Based Resistance Model of the Overlap Regions in LDD-MOSFETs [O] . E. Gondro, F. Schuler, P. Klein 1998

机译：基于物理的LDD-MOSFET重叠区电阻模型

A Physics Based Resistance Model of the Overlap Regions in LDD-MOSFETs

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