Summary form only given. We have developed a two-dimensional,electromagnetic, PIC-MCC code to study the ion energy and angulardistributions in the RF biased sheaths. At the bulk-sheath boundary, theion flux distribution into the sheath region can be specified, say, fromour simple two-dimensional fluid simulation slightly different fromParanjpe's (1994) in that we use global model to determine the electrontemperature. The electron flux into the sheath region is adjusted tosatisfy the quasi-neutrality condition at every fixed time intervalduring the simulation. We will present simulation results of ion energyand angular distributions, ion flux incident on the wafer, and self-biasat the wafer as a function of the applied RF frequency, the amplitude ofthe RF bias, ion mass, and the blocking capacitance. The results fromparticle simulations will also be compared with analytic calculations.We found if the incoming ion flux is uniform, then the ion flux strikingthe wafer remains nearly uniform across the wafer. The spread of ionangular distribution was found to be larger near the wafer's edge thanthe center of the wafer
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