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Development of Low Cost and High Throughput W-CMP Process

机译:低成本高通量W-CMP工艺的发展

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A W-CMP process was introduced using a novel consumable set and polisher configuration. The process demonstrated increase in throughput and reduction in cost of consumables over typical processes (Fig 9). Robust optical endpoint was demonstrated. Patterned wafer performance, including oxide erosion and defects, were equal to or better than typical performance.
机译:使用新颖的易损件和抛光机配置引入了W-CMP工艺。与典型流程相比,该流程显示出吞吐量的增加和耗材成本的降低(图9)。鲁棒的光学终点被证明。包括氧化物腐蚀和缺陷在内的晶圆图案化性能等于或优于典型性能。

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