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首页> 外文会议>International VLSI multilevel interconnection conference;VMIC >ELECTRICAL CHARACTERISTICS FOR METAL CONTACT IN ULSI INTERCONNECTION APPLICATIONS
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ELECTRICAL CHARACTERISTICS FOR METAL CONTACT IN ULSI INTERCONNECTION APPLICATIONS

机译：ULSI互连应用中金属接触的电气特性

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The electrical characteristics of metal contact resistance and leakage current are evaluated by various process conditions. The changes of resistance and leakage current were checked under the variation of temperature for several sizes of Metal/N+ active, Metal/P+ active contact. The lower contact resistance is reached for the larger contact size, or the smaller contact aspect ratio. When the contact aspect ratio becomes larger than 5, IMP Ti/CVD TiN barrier metal(B/M) deposition process has much lower contact resistance and leakage current than those by collimated Ti/Conv. TiN B/M deposition process. The superior bottom coverage in the IMP Ti/CVD TiN process explains these differences of electrical characteristics. The plug RTP after contact plug implantation is very important factor to lower the contact resistance. To make more stable and low resistance and leakage current for high aspect ratio contact, the application of IMP Ti/CVD TiN process is necessary for the B/M formation.
机译：金属接触电阻和漏电流的电气特性可通过各种工艺条件进行评估。在温度变化的情况下，针对几种尺寸的Metal / N +有源触点，Metal / P +有源触点，检查了电阻和泄漏电流的变化。对于较大的接触尺寸或较小的接触长宽比，可以达到较低的接触电阻。当接触长宽比大于5时，IMP Ti / CVD TiN势垒金属（B / M）沉积工艺的接触电阻和漏电流要比准直Ti / Conv的低得多。 TiN B / M沉积工艺。 IMP Ti / CVD TiN工艺中出色的底部覆盖率可解释这些电气特性差异。接触塞注入后的塞RTP是降低接触电阻的重要因素。为了使高纵横比的接触更稳定，电阻和泄漏电流更低，B / M的形成必须采用IMP Ti / CVD TiN工艺。

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