Copper Dual Damascene (Cu2D) technology, that uses Cu for both plugs and wires, is becoming the process of choice for deep submicron integrated circuit (IC) manufacturing. The Cu2D sequence includes multiple uses of CMP both for dielectric planarization and for shaping plugs and wires. Copper practically does not form volatile compounds, complicating development of alternative techniques, capable to remove the overburden copper. This makes Cu CMP an enabling and key critical operation for Cu2D technology. The paper discusses fundamental concepts of Cu CMP, including task formulation, major definitions, mechanisms of material removal and general features of the process architecture.
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