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首页> 外文会议>International VLSI multilevel interconnection conference;VMIC >GAP FILLING CAPABILITY STUDY OF LTS/HOT AL PROCESS ON METAL DAMASCENE
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GAP FILLING CAPABILITY STUDY OF LTS/HOT AL PROCESS ON METAL DAMASCENE

机译：LTS /热过程在金属大马士革上的间隙填充能力研究

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摘要

As ULSI BEOL wiring is scaled to 0.175 um dimensions and sub-0.5 um pitches, the challenges to conventional Al RIE BEOL processes are etching, reliability of high aspect ratio Al lines and oxide gap fill and planarization of such lines. Single and dual damascene approaches for giga-scale DRAM BEOL (smaller than 0.175 um and beyond) offer the advantages over conventional schemes of self-planarization and simple oxide etches. In this report, we compare the Al filling of 0.13 to 0.18 um line width/3.8KA to 4.2 KA trench height, 2 up to 3.5 aspect ratio structure by ULVAC LTS/Hot Al processes at 395C and 418C E-chuck temperature setting. We demonstrated that a LTS/Hot Al fill process with Ti/TiN glue layer at 395 and 418 C shows the good gap fill performance. We also demonstrated that LTS/Hot Al fill processes at 395C shows some void observation in the trench with Ti glue layer only, but no voids were observed at 418C process. Thus we think that the LTS/Hot Al fill process of ULVAC is possible for single damascene metallization schemes at least down to 0.175um structure/0.35 um pitches and 3.5 to 1 aspect ratio.
机译：随着ULSI BEOL布线的尺寸缩小到0.175 um尺寸和小于0.5 um的间距，传统的Al RIE BEOL工艺面临的挑战是蚀刻，高纵横比的Al线的可靠性和氧化物间隙填充以及这些线的平面化。千兆级DRAM BEOL（小于0.175 um或更高）的单镶嵌和双镶嵌方法提供了优于自平面化和简单氧化物刻蚀的常规方案的优势。在本报告中，我们比较了在395C和418C电子卡盘温度设置下通过ULVAC LTS / Hot Al工艺对0.13至0.18 um线宽/3.8KA至4.2 KA沟槽高度的Al填充，2至3.5纵横比结构的Al填充。我们证明了采用Ti / TiN胶层在395和418 C下进行的LTS /热Al填充工艺显示出良好的间隙填充性能。我们还证明，在395C的LTS /热Al填充过程中，仅使用Ti胶层在沟槽中观察到一些空隙，而在418C的过程中未观察到空隙。因此，我们认为，对于单个镶嵌金属化方案，ULVAC的LTS / Hot Al填充工艺至少可以降低到0.175um结构/0.35um间距和3.5：1的长宽比。

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